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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Department:  ELECTRICAL & COMPUTER ENGINEERING

Results 181-193 of 193 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
1812009Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drainKoh, S.-M.; Sinha, M.; Tong, Y.; Chin, H.-C.; Fang, W.-W.; Zhang, X.; Ng, C.-M.; Samudra, G. ; Yeo, Y.-C. 
1822007Superjunction power LDMOS on partial SOI platformChen, Y.; Buddharaju, K.D.; Liang, Y.C. ; Samudra, G.S. ; Feng, H.H.
183May-2002Supply-voltage optimization for below-70-nm technology-node MOSFETsWakabayashi, H.; Samudra, G.S. ; Djomehri, I.J.; Nayfeh, H.; Antoniadis, D.A.
184Feb-2005Theoretical analyses of oxide-bypassed superjunction power metal oxide semiconductor field effect transistor devicesChen, Y.; Liang, Y.C. ; Samudra, G.S. 
1852005Thin body silicon-on-insulator N-MOSFET with silicon-carbon source/drain regions for performance enhancementAng, K.-W.; Chui, K.-J.; Bliznetsov, V.; Wang, Y.; Wong, L.-Y.; Tung, C.-H.; Balasubramanian, N.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. 
1862005Three-port RF characterization of MOS transistorsMahalingam, U.; Rustagi, S.C.; Samudra, G.S. 
187Nov-2003Tunable Oxide-Bypassed Trench Gate MOSFET: Breaking the Ideal Superjunction MOSFET Performance Line at Equal Column WidthYang, X.; Liang, Y.C. ; Samudra, G.S. ; Liu, Y.
1882002Tunable Oxide-Bypassed VDMOS (OBVDMOS): Breaking the silicon limit for the second generationLiang, Y.C. ; Yang, X.; Samudra, G.S. ; Gan, K.P.; Liu, Y. 
1892004Tunable trench gate power MOSFET: A feasible superjunction device and process technologyYang, X.; Liang, Y.C. ; Samudra, G.S. ; Liu, Y.
19012-Sep-2005Tungsten nanocrystals embedded in high- k materials for memory applicationSamanta, S.K. ; Yoo, W.J. ; Samudra, G. ; Tok, E.S. ; Bera, L.K.; Balasubramanian, N.
1912009Tunneling field-effect transistor: Effect of strain and temperature on tunneling currentGuo, P.-F.; Yang, L.-T.; Yang, Y.; Fan, L.; Han, G.-Q. ; Samudra, G.S. ; Yeo, Y.-C. 
1922008Uniaxial strained silicon n-FETs on silicon-germanium-on-insulator substrates with an e-Si0.7Ge0.3 stress transfer layer and source/drain stressors for performance enhancementWang, G.H.; Toh, E.-H.; Foo, Y.-L.; Tripathy, S. ; Balakumar, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
193Jun-2007Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nMOSFETLim, A.E.-J.; Lee, R.T.P. ; Wang, X.P.; Hwang, W.S.; Tung, C.H.; Samudra, G.S. ; Kwong, D.-L.; Yeo, Y.-C.