ELECTRICAL AND COMPUTER ENGINEERING

Organization name
ELECTRICAL AND COMPUTER ENGINEERING


Results 1141-1160 of 15308 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
11411-Aug-2010The effects of Schottky barrier profile on spin dependent tunneling in a ferromagnet-insulator-semiconductor systemChung, N.L.; Jalil, M.B.A. ; Tan, S.G.
1142Mar-1997The effects of polysilicon dopant depletion and Fowler-Nordheim tunnelling on the characteristics of N+ polysilicon-oxide-silicon capacitorsLing, C.H. ; Ang, D.S. ; Ooi, J.A.
1143Apr-2012The effects of interlayer mismatch on electronic properties of bilayer armchair graphene nanoribbonsQian, Y.; Lam, K.-T.; Lee, C. ; Liang, G. 
11449-May-2007The effects of gas exposure and UV illumination on field emission from individual ZnO nanowiresYeong, K.S.; Maung, K.H.; Thong, J.T.L. 
1145Aug-1990The effects of current spreading in the semiconductor on the determination of contact resistanceChua, S.J. ; Chong, T.C. ; Lee, S.H.; Wang, Y.S.
1146Nov-2008The effects of cotunneling and spin flip on the spin polarized transport in a ferromagnetic single electron transistorMa, M.J. ; Jalil, M.B.A. ; Tan, S.G. 
114726-Jul-2010The effects of cap layers on electrical properties of indium nitride filmsLiu, W.; Tan, R.J.N.; Soh, C.B.; Chua, S.J. 
1148May-2010The effect of vacuum annealing on grapheneNi, Z.H.; Wang, H.M.; Luo, Z.Q.; Wang, Y.Y.; Yu, T.; Wu, Y.H. ; Shen, Z.X.
114915-May-2005The effect of thermal fluctuation on tilted perpendicular mediaCheng, X.Z. ; Jalil, M.B.A. 
11502006The effect of spreading resistance on the magnetoresistance of current-perpendicular-to-plane spin valves with patterned spacer layersKumar, S. ; Jalil, M. ; G, T.S.; Rachel, N.
1151Nov-2006The effect of spreading resistance on the magnetoresistance of current-perpendicular-to-plane spin valves with patterned layersKumar, S.B. ; Jalil, M.B.A.; Tan, S.G. ; Ng, R.; Liew, T. 
1218-Jan-2006The effect of post-annealing treatment on photoluminescence of ZnO nanorods prepared by hydrothermal synthesisQuang, L.H.; Chua, S.J. ; Loh, K.P. ; Fitzgerald, E.
132016The effect of oxygen vacancies on water wettability of transition metal based SrTiO3 and rare-earth based Lu2O3Sarkar, T ; Ghosh, S ; Annamalai, M ; Patra, A ; Stoerzinger, K; Lee, Y.-L; Prakash, S ; Motapothula, M.R ; Shao-Horn, Y; Giordano, L; Venkatesan, T 
142008The effect of node connectivity control on the throughput of distributed MAC networksBanu, J.; Huat, C.Y. ; Chin, F.P.S. 
152015The effect of magnetic field on chiral transmission in p-n-p graphene junctionsLi, Y; Wan, Q; Peng, Y; Wang, G; Qian, Z; Zhou, G; Jalil, M.B.A 
1622-Sep-2010The effect of magnetic field and disorders on the electronic transport in graphene nanoribbons.Kumar, S.B. ; Jalil, M.B.; Tan, S.G.; Liang, G.
1731-Aug-2010The effect of magnetic field and disorders on the electronic transport in graphene nanoribbonsBala Kumar, S. ; Jalil, M.B.A. ; Tan, S.G.; Liang, G. 
1814-Jan-2013The effect of light soaking on crystalline silicon surface passivation by atomic layer deposited Al2O3Liao, B.; Stangl, R.; Mueller, T.; Lin, F. ; Bhatia, C.S. ; Hoex, B. 
191-Jan-2010The effect of length of single-walled carbon nanotubes (SWNTs) on electrical properties of conducting polymer-SWNT compositesSingh, I.; Verma, A.; Kaur, L.; Bharadwaj, L.M.; Bhatia, V.; Jain, V.K.; Bhatia, C.S. ; Bhatnagar, P.K.; Mathur, P.C.
20Apr-2011The effect of layer number and substrate on the stability of graphene under MeV proton beam irradiationMathew, S. ; Chan, T.K. ; Zhan, D.; Gopinadhan, K. ; Barman, A.-R.; Breese, M.B.H. ; Dhar, S. ; Shen, Z.X.; Venkatesan, T. ; Thong, J.T.L.