Full Name
Yuan Ping Feng
Variants
Feng, Y.-P.
Ping Feng, Y.
Yuanping, F.
Feng Y.P.
Feng, Y.
Yuan-Ping, F.
Feng, Yuan Ping
Feng, Y.P.
Feng, Y.-Y.
Feng, Yuan-ping
Yuan Ping Feng
 
Main Affiliation
 
Faculty
 
Email
phyfyp@nus.edu.sg
 

Publications

Refined By:
Type:  Article
Date Issued:  [2010 TO 2019]
Date Issued:  2012

Results 1-20 of 33 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
113-Dec-2012Defect engineering in CdSxSe1-x nanobelts: An insight into carrier relaxation dynamics via optical pump-terahertz probe spectroscopyLiu, H.; Lu, J.; Teoh, H.F.; Li, D.; Feng, Y.P. ; Tang, S.H. ; Sow, C.H. ; Zhang, X.
226-Apr-2012Dehydrogenation mechanism of monoammoniated lithium amidoborane [Li(NH 3)NH 2BH 3]Bhattacharya, S.; Xiong, Z.; Wu, G.; Chen, P.; Feng, Y.P. ; Majumder, C.; Das, G.P.
3Aug-2012Effect of interfacial strain on spin injection and spin polarization of Co 2CrAl/NaNbO 3/Co 2CrAl magnetic tunneling junctionCai, Y. ; Bai, Z.; Yang, M. ; Feng, Y.P. 
414-Sep-2012Electron transmission modes in electrically biased graphene nanoribbons and their effects on device performanceShen, L. ; Zeng, M. ; Li, S.; Sullivan, M.B.; Feng, Y.P. 
511-Dec-2012Energy-gap opening in a Bi(110) nanoribbon induced by edge reconstructionSun, J.-T. ; Huang, H. ; Wong, S.L.; Gao, H.-J.; Feng, Y.P. ; Wee, A.T.S. 
617-Oct-2012Epitaxial growth of ZnO film on Si(111) with CeO 2(111) as buffer layerWong, T.I.; Tan, H.R.; Sentosa, D.; Wong, L.M.; Wang, S.J.; Feng, Y.P. 
77-May-2012First principles study of Bismuth alloying effects in GaAs saturable absorberLi, D.; Yang, M. ; Zhao, S.; Cai, Y. ; Feng, Y. 
812-Mar-2012First principles study of the ternary complex model of EL2 defect in GaAs saturable absorberLi, D.; Yang, M. ; Cai, Y. ; Zhao, S.; Feng, Y. 
9Oct-2012First-principles study of the effect of Bi Ga heteroantisites in GaAs:Bi alloyLi, D.; Yang, M. ; Zhao, S.; Cai, Y. ; Lu, Y. ; Bai, Z.; Feng, Y. 
1021-Jul-2012Gold clusters on Nb-doped SrTiO 3: Effects of metal-insulator transition on heterogeneous Au nanocatalysisZhou, M.; Feng, Y.P. ; Zhang, C. 
1125-Oct-2012Interfacial properties of silicon nitride grown on epitaxial graphene on 6H-SiC substrateYang, M. ; Chai, J.W.; Wang, Y.Z.; Wang, S.J.; Feng, Y.P. 
122012Investigation of the non-volatile resistance change in noncentrosymmetric compoundsHerng, T.S. ; Kumar, A.; Ong, C.S. ; Feng, Y.P. ; Lu, Y.H.; Zeng, K.Y. ; Ding, J. 
137-Feb-2012Li + ionic conductivities and diffusion mechanisms in Li-based imides and lithium amideLi, W. ; Wu, G.; Xiong, Z.; Feng, Y.P. ; Chen, P.
1428-Apr-2012Li-Na ternary amidoborane for hydrogen storage: Experimental and first-principles studyLi, W. ; Miao, L.; Scheicher, R.H.; Xiong, Z.; Wu, G.; Araújo, C.M.; Blomqvist, A.; Ahuja, R.; Feng, Y. ; Chen, P.
159-Jan-2012Magnetic and transport properties of Mn 3-xGa/MgO/Mn 3-xGa magnetic tunnel junctions: A first-principles studyBai, Z.; Cai, Y. ; Shen, L. ; Yang, M. ; Ko, V.; Han, G.; Feng, Y. 
1621-Jul-2012Nanostructured trimetallic Pt/FeRuC, Pt/NiRuC, and Pt/CoRuC catalysts for methanol electrooxidationPoh, C.K. ; Tian, Z.; Gao, J.; Liu, Z.; Lin, J.; Feng, Y.P. ; Su, F.
177-May-2012Nanowelding of carbon nanotube-metal contacts: An effective way to control the Schottky barrier and performance of carbon nanotube based field effect transistorsNurbawono, A.; Zhang, A. ; Cai, Y. ; Wu, Y. ; Feng, Y.P. ; Zhang, C. 
1831-May-2012Orientation control of epitaxial Ge thin films growth on SrTiO 3 (100) by ultrahigh vacuum sputteringDeng, W.; Yang, M. ; Chai, J.; Wong, T.I.; Du, A.; Ng, C.M.; Feng, Y. ; Wang, S.
1917-Oct-2012Origin of long-range ferromagnetic ordering in metal-organic frameworks with antiferromagnetic dimeric-Cu(II) building unitsShen, L. ; Yang, S.-W.; Xiang, S.; Liu, T.; Zhao, B.; Ng, M.-F.; Göettlicher, J.; Yi, J. ; Li, S.; Wang, L.; Ding, J.; Chen, B.; Wei, S.-H.; Feng, Y.P. 
2011-Jan-2012Phase selection enabled formation of abrupt axial heterojunctions in branched oxide nanowiresGao, J.; Lebedev, O.I.; Turner, S.; Li, Y.F.; Lu, Y.H. ; Feng, Y.P. ; Boullay, P.; Prellier, W.; Van Tendeloo, G.; Wu, T.