Please use this identifier to cite or link to this item:
|Title:||Nanowelding of carbon nanotube-metal contacts: An effective way to control the Schottky barrier and performance of carbon nanotube based field effect transistors|
|Citation:||Nurbawono, A., Zhang, A., Cai, Y., Wu, Y., Feng, Y.P., Zhang, C. (2012-05-07). Nanowelding of carbon nanotube-metal contacts: An effective way to control the Schottky barrier and performance of carbon nanotube based field effect transistors. Journal of Chemical Physics 136 (17) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4711082|
|Abstract:||Schottky barriers formed at carbon nanotube (CNT)-metal contacts have been well known to be crucial for the performance of CNT based field effect transistors (FETs). Through first principles calculations we show that a nanowelding process can drastically reduce the Schottky barriers at CNT-metal interfaces, resulting in significantly improved conductivity of CNT-based FETs. The proposed nanowelding can be realized by either laser local heating or a heating process via a controllable pulse current. Results presented in this paper may have great implications in future design and applications of CNT-based electronics. © 2012 American Institute of Physics.|
|Source Title:||Journal of Chemical Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 10, 2018
checked on Dec 8, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.