Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4711082
Title: Nanowelding of carbon nanotube-metal contacts: An effective way to control the Schottky barrier and performance of carbon nanotube based field effect transistors
Authors: Nurbawono, A.
Zhang, A. 
Cai, Y. 
Wu, Y. 
Feng, Y.P. 
Zhang, C. 
Issue Date: 7-May-2012
Source: Nurbawono, A., Zhang, A., Cai, Y., Wu, Y., Feng, Y.P., Zhang, C. (2012-05-07). Nanowelding of carbon nanotube-metal contacts: An effective way to control the Schottky barrier and performance of carbon nanotube based field effect transistors. Journal of Chemical Physics 136 (17) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4711082
Abstract: Schottky barriers formed at carbon nanotube (CNT)-metal contacts have been well known to be crucial for the performance of CNT based field effect transistors (FETs). Through first principles calculations we show that a nanowelding process can drastically reduce the Schottky barriers at CNT-metal interfaces, resulting in significantly improved conductivity of CNT-based FETs. The proposed nanowelding can be realized by either laser local heating or a heating process via a controllable pulse current. Results presented in this paper may have great implications in future design and applications of CNT-based electronics. © 2012 American Institute of Physics.
Source Title: Journal of Chemical Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/56768
ISSN: 00219606
DOI: 10.1063/1.4711082
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