Orientation control of epitaxial Ge thin films growth on SrTiO 3 (100) by ultrahigh vacuum sputtering

Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2012.03.037

Title:	Orientation control of epitaxial Ge thin films growth on SrTiO 3 (100) by ultrahigh vacuum sputtering
Authors:	Deng, W. Yang, M. Chai, J. Wong, T.I. Du, A. Ng, C.M. Feng, Y. Wang, S.
Keywords:	Epitaxy Ge/SrTiO 3 Transmission electron microscopy X-ray diffraction X-ray photoemission spectroscopy
Issue Date:	31-May-2012
Citation:	Deng, W., Yang, M., Chai, J., Wong, T.I., Du, A., Ng, C.M., Feng, Y., Wang, S. (2012-05-31). Orientation control of epitaxial Ge thin films growth on SrTiO 3 (100) by ultrahigh vacuum sputtering. Thin Solid Films 520 (15) : 4880-4883. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2012.03.037
Abstract:	We report the orientation control of crystalline Ge (111) and Ge (001) growth on SrTiO 3 (100) substrate by adjusting the temperature of substrate. It is found that the substrate temperature plays an important role for the formation of crystalline Ge with different surface orientations and interfacial chemical configuration during the sputtering process. At 500 °C, Ge (111) with good crystalline quality is formed, while Ge (001) is preferably grown on SrTiO 3 substrate at 650 °C. Our results show the possibility of manipulating the surface orientations during Ge growth on SrTiO 3 by controlling the substrate temperatures. © 2012 Elsevier B.V. All rights reserved.
Source Title:	Thin Solid Films
URI:	http://scholarbank.nus.edu.sg/handle/10635/97471
ISSN:	00406090
DOI:	10.1016/j.tsf.2012.03.037
Appears in Collections:	Staff Publications

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