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|Title:||Orientation control of epitaxial Ge thin films growth on SrTiO 3 (100) by ultrahigh vacuum sputtering|
Transmission electron microscopy
X-ray photoemission spectroscopy
|Citation:||Deng, W., Yang, M., Chai, J., Wong, T.I., Du, A., Ng, C.M., Feng, Y., Wang, S. (2012-05-31). Orientation control of epitaxial Ge thin films growth on SrTiO 3 (100) by ultrahigh vacuum sputtering. Thin Solid Films 520 (15) : 4880-4883. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2012.03.037|
|Abstract:||We report the orientation control of crystalline Ge (111) and Ge (001) growth on SrTiO 3 (100) substrate by adjusting the temperature of substrate. It is found that the substrate temperature plays an important role for the formation of crystalline Ge with different surface orientations and interfacial chemical configuration during the sputtering process. At 500 °C, Ge (111) with good crystalline quality is formed, while Ge (001) is preferably grown on SrTiO 3 substrate at 650 °C. Our results show the possibility of manipulating the surface orientations during Ge growth on SrTiO 3 by controlling the substrate temperatures. © 2012 Elsevier B.V. All rights reserved.|
|Source Title:||Thin Solid Films|
|Appears in Collections:||Staff Publications|
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