Please use this identifier to cite or link to this item: https://doi.org/10.1021/jp304054u
Title: Interfacial properties of silicon nitride grown on epitaxial graphene on 6H-SiC substrate
Authors: Yang, M. 
Chai, J.W.
Wang, Y.Z.
Wang, S.J.
Feng, Y.P. 
Issue Date: 25-Oct-2012
Citation: Yang, M., Chai, J.W., Wang, Y.Z., Wang, S.J., Feng, Y.P. (2012-10-25). Interfacial properties of silicon nitride grown on epitaxial graphene on 6H-SiC substrate. Journal of Physical Chemistry C 116 (42) : 22315-22318. ScholarBank@NUS Repository. https://doi.org/10.1021/jp304054u
Abstract: Si 3N 4 thin films were grown on epitaxial graphene layers on 6H-SiC (0001) substrate, and the related interfacial properties have been studied by using high-resolution transmission electron microscopy (TEM), X-ray photoemission spectroscopy (XPS), and first-principles calculations. It is found that Si 3N 4 forms uniform coverage on graphene/SiC. The interaction between graphene and Si 3N 4 is weak, and the measured barrier height between them is 2.7 ± 0.1 eV, which is high enough to minimize the tunneling carriers. The in situ thermal treatment shows that the Si 3N 4/graphene/6H-SiC heterojunctions are thermally stable up to 800 °C. These results suggest promising application of Si 3N 4 as a dielectric in graphene-based electronic devices. © 2012 American Chemical Society.
Source Title: Journal of Physical Chemistry C
URI: http://scholarbank.nus.edu.sg/handle/10635/96964
ISSN: 19327447
DOI: 10.1021/jp304054u
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