Please use this identifier to cite or link to this item:
|Title:||Interfacial properties of silicon nitride grown on epitaxial graphene on 6H-SiC substrate|
|Authors:||Yang, M. |
|Citation:||Yang, M., Chai, J.W., Wang, Y.Z., Wang, S.J., Feng, Y.P. (2012-10-25). Interfacial properties of silicon nitride grown on epitaxial graphene on 6H-SiC substrate. Journal of Physical Chemistry C 116 (42) : 22315-22318. ScholarBank@NUS Repository. https://doi.org/10.1021/jp304054u|
|Abstract:||Si 3N 4 thin films were grown on epitaxial graphene layers on 6H-SiC (0001) substrate, and the related interfacial properties have been studied by using high-resolution transmission electron microscopy (TEM), X-ray photoemission spectroscopy (XPS), and first-principles calculations. It is found that Si 3N 4 forms uniform coverage on graphene/SiC. The interaction between graphene and Si 3N 4 is weak, and the measured barrier height between them is 2.7 ± 0.1 eV, which is high enough to minimize the tunneling carriers. The in situ thermal treatment shows that the Si 3N 4/graphene/6H-SiC heterojunctions are thermally stable up to 800 °C. These results suggest promising application of Si 3N 4 as a dielectric in graphene-based electronic devices. © 2012 American Chemical Society.|
|Source Title:||Journal of Physical Chemistry C|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 14, 2018
WEB OF SCIENCETM
checked on Jun 18, 2018
checked on Feb 25, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.