Please use this identifier to cite or link to this item: https://doi.org/10.1021/jp307864d
Title: Defect engineering in CdSxSe1-x nanobelts: An insight into carrier relaxation dynamics via optical pump-terahertz probe spectroscopy
Authors: Liu, H.
Lu, J.
Teoh, H.F.
Li, D.
Feng, Y.P. 
Tang, S.H. 
Sow, C.H. 
Zhang, X.
Issue Date: 13-Dec-2012
Citation: Liu, H., Lu, J., Teoh, H.F., Li, D., Feng, Y.P., Tang, S.H., Sow, C.H., Zhang, X. (2012-12-13). Defect engineering in CdSxSe1-x nanobelts: An insight into carrier relaxation dynamics via optical pump-terahertz probe spectroscopy. Journal of Physical Chemistry C 116 (49) : 26036-26042. ScholarBank@NUS Repository. https://doi.org/10.1021/jp307864d
Abstract: Defects in nanomaterials often induce dramatic changes in the photoelectrical properties of semiconducting II-VI compound nanomaterials. The relationship between defects and carrier dynamics is pivotal in material engineering for potential applications. A thorough understanding of the dynamics of defect-related free carrier depletion is particularly important for the fabrication and optimization of nano-optoelectronic devices. In this work, optical pump-terahertz probe spectroscopy was employed to investigate the carrier dynamics in CdS and Se-alloyed CdS nanobelts. The dynamics are dominated by the surface defect trapping in the case of CdS and structural-defect-related recombination for the Se-alloyed CdS. The conclusion is also supported by temperature-dependent photoluminescence spectroscopic studies. Our results indicate that congeneric element replacement is an effective approach for defect-distribution restructuring, which modifies the physical properties of nanomaterials through defect engineering. © 2012 American Chemical Society.
Source Title: Journal of Physical Chemistry C
URI: http://scholarbank.nus.edu.sg/handle/10635/96154
ISSN: 19327447
DOI: 10.1021/jp307864d
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