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|Title:||Investigation of the non-volatile resistance change in noncentrosymmetric compounds|
|Authors:||Herng, T.S. |
|Citation:||Herng, T.S., Kumar, A., Ong, C.S., Feng, Y.P., Lu, Y.H., Zeng, K.Y., Ding, J. (2012). Investigation of the non-volatile resistance change in noncentrosymmetric compounds. Scientific Reports 2 : -. ScholarBank@NUS Repository. https://doi.org/10.1038/srep00587|
|Abstract:||Coexistence of polarization and resistance-switching characteristics in single compounds has been long inspired scientific and technological interests. Here, we report the non-volatile resistance change in noncentrosymmetric compounds investigated by using defect nanotechnology and contact engineering. Using a noncentrosymmetric material of ZnO as example, we first transformed ZnO into high resistance state. Then ZnO electrical polarization was probed and its domains polarized 1806 along the -axis with long-lasting memory effect (.25 hours). Based on our experimental observations, we have developed a vacancy-mediated pseudoferroelectricity model. Our first-principle calculations propose that vacancy defects initiate a spontaneous inverted domains nucleation at grain boundaries, and then they grow in the presence of an electrical field. The propagation of inverted domains follows the scanning tip motion under applied electrical field, leading to the growth of polarized domains over large areas.|
|Source Title:||Scientific Reports|
|Appears in Collections:||Staff Publications|
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