Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3676195
Title: Magnetic and transport properties of Mn 3-xGa/MgO/Mn 3-xGa magnetic tunnel junctions: A first-principles study
Authors: Bai, Z.
Cai, Y. 
Shen, L. 
Yang, M. 
Ko, V.
Han, G.
Feng, Y. 
Issue Date: 9-Jan-2012
Citation: Bai, Z., Cai, Y., Shen, L., Yang, M., Ko, V., Han, G., Feng, Y. (2012-01-09). Magnetic and transport properties of Mn 3-xGa/MgO/Mn 3-xGa magnetic tunnel junctions: A first-principles study. Applied Physics Letters 100 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3676195
Abstract: Magnetic and transport properties of Mn 3-xGa/MgO/Mn 3-xGa (0≤x≤1) magnetic tunnel junctions are studied using first-principles approach based on density functional theory and non-equilibrium Green's function. Perpendicular magnetization, of which the magnetic anisotropy energy reaches more than 1 meV/unit-cell, is confirmed to be energetically favoured by both Mn 2Ga and Mn 3Ga thin films. Furthermore, despite high spin-polarization at the Fermi energy for both these compounds as reported, our transport calculation shows considerable disparity in the transmission behaviour between Mn 2Ga/MgO/Mn 2Ga(001) and Mn 3Ga/MgO/Mn 3Ga(001) magnetic tunnel junctions: huge optimistic tunneling magnetoresistance ratio of 10 3% for the former, and nevertheless, no tunneling magnetoresistance effect absolutely for the latter. This phenomenon is attributed to the symmetry selective filtering effect of the MgO spacer. On this premise, Mn 3-xGa compounds with low Mn concentration are predicted to be promising candidate materials to serve as the electrodes of spin-transfer torque devices in the next-generation data storage technique. © 2012 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/97120
ISSN: 00036951
DOI: 10.1063/1.3676195
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