Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevLett.109.246804
Title: Energy-gap opening in a Bi(110) nanoribbon induced by edge reconstruction
Authors: Sun, J.-T. 
Huang, H. 
Wong, S.L.
Gao, H.-J.
Feng, Y.P. 
Wee, A.T.S. 
Issue Date: 11-Dec-2012
Source: Sun, J.-T., Huang, H., Wong, S.L., Gao, H.-J., Feng, Y.P., Wee, A.T.S. (2012-12-11). Energy-gap opening in a Bi(110) nanoribbon induced by edge reconstruction. Physical Review Letters 109 (24) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevLett.109.246804
Abstract: Scanning tunnelling microscopy and spectroscopy experiments complemented by first-principles <?format ?>calculations have been conducted to study the electronic structure of 4 monolayer Bi(110) nanoribbons on epitaxial graphene on silicon carbide [4H-SiC(0001)]. In contrast with the semimetal property of elemental bismuth, an energy gap of 0.4ÂeV is measured at the centre of the Bi(110) nanoribbons. Edge reconstructions, which can facilitate the edge strain energy release, are found to be responsible for the band gap opening. The calculated density of states around the Fermi level are decreased quickly to zero from the terrace edge to the middle of a Bi(110) nanoribbon potentially signifying a spatial metal-to-semiconductor transition. This study opens new avenues for room-temperature bismuth nanoribbon-based electronic devices. © 2012 American Physical Society.
Source Title: Physical Review Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/76117
ISSN: 00319007
DOI: 10.1103/PhysRevLett.109.246804
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

16
checked on Mar 26, 2018

WEB OF SCIENCETM
Citations

13
checked on Mar 26, 2018

Page view(s)

32
checked on Apr 20, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.