Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.86.115419
Title: Electron transmission modes in electrically biased graphene nanoribbons and their effects on device performance
Authors: Shen, L. 
Zeng, M. 
Li, S.
Sullivan, M.B.
Feng, Y.P. 
Issue Date: 14-Sep-2012
Source: Shen, L., Zeng, M., Li, S., Sullivan, M.B., Feng, Y.P. (2012-09-14). Electron transmission modes in electrically biased graphene nanoribbons and their effects on device performance. Physical Review B - Condensed Matter and Materials Physics 86 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.86.115419
Abstract: Using ab initio transport methods, we investigate electron transmission modes (channels, pathways, and intensities) in electrically biased graphene nanoribbons (GNRs) under different growth conditions. In addition to the bond currents, we report loop currents in such devices, induced by the electrons hopping between carbon atoms of the same sublattice under bias. The loop current channel as well as the bond current channel play an important role in the local current in electrically biased GNR-based devices. The effect of edge functional groups and surface defects/groups on device performance depends on the current pathway and intensity in these two channels. Understanding the details of local currents in GNRs paves the way to make high-performance GNR-based electronic devices, such as GNR field effect transistors. © 2012 American Physical Society.
Source Title: Physical Review B - Condensed Matter and Materials Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/55852
ISSN: 10980121
DOI: 10.1103/PhysRevB.86.115419
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