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Ong Chong Kim

rp09728

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Full Name
Ong Chong Kim
(not current staff)
Variants
C.K. Ong
Ong, Chong Kim
Ong, C.-K.
Ong, C.K.
Ong, C.
ONG, CHONG KIM
 
Main Affiliation
 
Faculty
 
Email
phyongck@nus.edu.sg
 

Publications

Results 441-460 of 499 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
4412000The anomalous unloaded quality factor behavior of high T c superconducting microstrip resonator in weak dc magnetic fieldJin, B.B. ; Rao, X.S. ; Tan, C.Y. ; Ong, C.K. 
4421995The charging behaviour and internal electric field of PMMA irradiated by a kiloelectronvolt electron beamChen, H.; Gong, H. ; Ong, C.K. 
443Sep-2004The decomposition mechanism of SiO2 with the deposition of oxygen-deficient M(Hf or Zr)Ox filmsLi, Q.; Wang, S.J.; Lim, P.C.; Chai, J.W.; Huan, A.C.H. ; Ong, C.K. 
44410-Jul-1988The edge free energy of an atomically smooth diamond surfaceOng, C.K. ; Tan, A.K. ; Tan, H.S. 
4456-Mar-1998The effect of Al3+, Na+ and Li+ impurities on the charging ability of single-crystalline quartz under electron beam irradiationSong, Z.G.; Gong, H. ; Ong, C.K. 
446Jul-2004The effect of ultra-thin Al 2O 3 layers on the dielectric properties of LaAlO 3 thin film on siliconYan, L. ; Kong, L.B. ; Ong, C.K. 
4471-Mar-1998The effects of heating and annealing processes on the surface morphology and quality of double-sided YBa2Cu3O7-δ thin filmsXu, S.Y. ; Ong, C.K. ; Zhou, Y.L.; Low, B.L.; Chen, L.F. ; Zhang, X. 
825-Apr-2005The epitaxial ZrO2 on silicon as alternative gate dielectric: Film growth, characterization and electronic structure calculationsWang, S.J.; Dong, Y.F.; Huan, C.H.A. ; Feng, Y.P. ; Ong, C.K. 
92010The high frequency magnetic properties of self assembled Fe-Co-Si-N nanogranular thin filmsLiu, Y. ; Liu, Z.W.; Tan, C.Y.; Ong, C.K. ; Ramanujan, R.V.; Tan, C.Y.; Zhao, X.; Liu, E.
101991The interstitial hydrogen atom in gallium phosphideWong, K.F.; Khoo, G.S.; Ong, C.K. 
111998The large magnetoresistance property of La0.5Sr0.5CoO3-x thin films prepared by pulsed laser depositionLiu, J.-M. ; Ong, C.K. 
127-May-2001The magnetic, electrical transport and magnetoresistance properties of epitaxial La0.7Sr0.3Mn1-xFexO3 (x = 0-0.20) thin films prepared by pulsed laser depositionHuang, Q.; Li, Z.W. ; Li, J. ; Ong, C.K. 
131990The migration of self-interstitials in germaniumKhoo, G.S.; Ong, C.K. 
141993The multi-hole localization mechanism for particle emission from semiconductor surfacesKhoo, G.S.; Ong, C.K. ; Itoh, N.
151991The nature of the hydrogen-boron complex of crystalline SiOng, C.K. ; Khoo, G.S.
161991The nature of the hydrogen-phosphorus system in crystalline SiKhoo, G.S.; Ong, C.K. 
172006The phase formation and magnetodielectric property in (1-x)Bi 2Fe4O9-xBaO compositesWang, D.H. ; Ong, C.K. 
18Apr-1989The relaxation of the H-terminated diamond (C), Si and Ge (1 1 1) surfacesOng, C.K. 
19May-2000The reversal mechanism and coercivity of permanent magnetic materialsOng, C.K. ; Feng, Y.P. ; Zhao, G.P. ; Lim, H.S. ; Dan, W. 
202009The role of magnetoelastic strain on orbital control and transport properties in an LaTiO3-CoFe2O4 heterostructureLi, J.; Chu, H.F.; Zhang, Y.; Wang, J.; Zheng, D.N.; Song, Q.; Wang, P. ; Ma, Y.G. ; Ong, C.K. ; Wang, S.J.