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https://doi.org/10.1016/j.mseb.2004.12.023
Title: | The epitaxial ZrO2 on silicon as alternative gate dielectric: Film growth, characterization and electronic structure calculations | Authors: | Wang, S.J. Dong, Y.F. Huan, C.H.A. Feng, Y.P. Ong, C.K. |
Keywords: | Epitaxial ZrO2 Pulsed laser deposition X-ray photoelectron spectroscopy |
Issue Date: | 25-Apr-2005 | Citation: | Wang, S.J., Dong, Y.F., Huan, C.H.A., Feng, Y.P., Ong, C.K. (2005-04-25). The epitaxial ZrO2 on silicon as alternative gate dielectric: Film growth, characterization and electronic structure calculations. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 118 (1-3) : 122-126. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mseb.2004.12.023 | Abstract: | The epitaxial ZrO2 on silicon as alternative gate dielectric, including film growth, interface characterization and electronic structure calculations, have been studied using a combination of characterization tools. The films grown by pulsed laser deposition have high-quality microstructure and electrical properties. The atomic structure and band alignment at the ZrO 2/Si interfaces have been determined by high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. Relative stabilities and electronic properties of interface structure have been discussed and compared from the view of experimental and calculated results. © 2005 Elsevier B.V. All rights reserved. | Source Title: | Materials Science and Engineering B: Solid-State Materials for Advanced Technology | URI: | http://scholarbank.nus.edu.sg/handle/10635/98921 | ISSN: | 09215107 | DOI: | 10.1016/j.mseb.2004.12.023 |
Appears in Collections: | Staff Publications |
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