Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2004.05.009
Title: The decomposition mechanism of SiO2 with the deposition of oxygen-deficient M(Hf or Zr)Ox films
Authors: Li, Q.
Wang, S.J.
Lim, P.C.
Chai, J.W.
Huan, A.C.H. 
Ong, C.K. 
Keywords: Deposition
SiO2
XPS
Issue Date: Sep-2004
Citation: Li, Q., Wang, S.J., Lim, P.C., Chai, J.W., Huan, A.C.H., Ong, C.K. (2004-09). The decomposition mechanism of SiO2 with the deposition of oxygen-deficient M(Hf or Zr)Ox films. Thin Solid Films 462-463 (SPEC. ISS.) : 106-109. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.009
Abstract: The dynamic process of the reactions during deposition of M(Hf or Zr)O 2 thin films on SiO2-covered silicon substrate in oxygen deficient conditions has been investigated. A series of reactions across the interface were identified with thermodynamic arguments and with X-ray Photoelectron Spectroscopy (XPS) and transmission electron microscopy (TEM) analyses. The oxygen deficient MOx
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/98251
ISSN: 00406090
DOI: 10.1016/j.tsf.2004.05.009
Appears in Collections:Staff Publications

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