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|Title:||The multi-hole localization mechanism for particle emission from semiconductor surfaces||Authors:||Khoo, G.S.
|Issue Date:||1993||Citation:||Khoo, G.S., Ong, C.K., Itoh, N. (1993). The multi-hole localization mechanism for particle emission from semiconductor surfaces. Journal of Physics: Condensed Matter 5 (9) : 1187-1194. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/5/9/003||Abstract:||The authors have investigated the consequences of multi-hole localization at defect sites on the GaP(110) surface: the relaxation of the lattice and the emission of atoms due to bond breaking. It is shown that the combination of localization of two-hole states on a defect with cascade excitation results in emission of an atom from the defect. The results support the mechanism suggested by Hattori et al. (1990) of defect-initiated emission of Ga atoms under laser irradiation, of which the yield is a superlinear function of laser fluence.||Source Title:||Journal of Physics: Condensed Matter||URI:||http://scholarbank.nus.edu.sg/handle/10635/98296||ISSN:||09538984||DOI:||10.1088/0953-8984/5/9/003|
|Appears in Collections:||Staff Publications|
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