Chin Feng-Der,Albert

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Full Name

(not current staff)

Variants

Chin, A.

Main Affiliation

ELECTRICAL AND COMPUTER ENGINEERING

Faculty

FAC OF ENGINEERING

elecfa@nus.edu.sg

Refined By:

Author: Zhu, C.

Author: Li, M.-F.

Author: Yu, M.B.

Results 1-5 of 5 (Search time: 0.002 seconds).

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	Issue Date	Title	Author(s)
1	Feb-2003	A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectrics	Yu, X.; Zhu, C. ; Hu, H.; Chin, A. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.; Foo, P.D.; Yu, M.B.
2	2005	High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications	Kim, S.-J. ; Cho, B.J. ; Yu, M.B.; Li, M.-F. ; Xiong, Y.-Z.; Zhu, C. ; Chin, A. ; Kwong, D.-L.
3	Sep-2005	Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers	Kim, S.-J. ; Cho, B.J. ; Yu, M.B.; Li, M.-F. ; Xiong, Y.-Z.; Zhu, C. ; Chin, A. ; Kwong, D.-L.
4	Feb-2003	MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics	Hu, H.; Zhu, C. ; Yu, X.; Chin, A. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.; Foo, P.D.; Yu, M.B.; Liu, X.; Winkler, J.
5	Jan-2006	Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs	Wang, X.P.; Li, M.-F. ; Ren, C.; Yu, X.F.; Shen, C.; Ma, H.H. ; Chin, A. ; Zhu, C.X. ; Ning, J.; Yu, M.B.; Kwong, D.-L.