Chin Feng-Der,Albert

Collaboration Map View Statistics Email Alert RSS Feed

Full Name

(not current staff)

Variants

Chin, A.

Main Affiliation

ELECTRICAL AND COMPUTER ENGINEERING

Faculty

FAC OF ENGINEERING

elecfa@nus.edu.sg

Refined By:

Author: Zhu, C.X.

Author: Li, M.-F.

Author: Wang, X.P.

Results 1-5 of 5 (Search time: 0.004 seconds).

Refman EndNote Bibtex RefWorks Excel CSV PDF Send via email

	Issue Date	Title	Author(s)
1	2005	A new gate dielectric HfLaO with metal gate work function tuning capability and superior NMOSFETs performance	Wang, X.P.; Li, M.F. ; Chin, A. ; Zhu, C. ; Chi, R.; Yu, X.F.; Shen, C.; Du, A.Y.; Chan, D.S.H. ; Kwong, D.-L.
2	2005	New insights in hf based high-k gate dielectrics in mosfets	Li, M.-F. ; Zhu, C. ; Shen, C.; Yu, X.F.; Wang, X.P.; Feng, Y.P. ; Du, A.Y.; Yeo, Y.C. ; Samudra, G. ; Chin, A. ; Kwong, D.L.
3	Jun-2006	Physical and electrical characteristics of high-κ gate dielectric Hf(1-x)LaxOy	Wang, X.P.; Li, M.F. ; Chin, A. ; Zhu, C.X. ; Shao, J.; Lu, W.; Shen, X.C.; Yu, X.F.; Chi, R.; Shen, C.; Huan, A.C.H.; Pan, J.S.; Du, A.Y.; Lo, P.; Chan, D.S.H. ; Kwong, D.-L.
4	Jan-2006	Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs	Wang, X.P.; Li, M.-F. ; Ren, C.; Yu, X.F.; Shen, C.; Ma, H.H. ; Chin, A. ; Zhu, C.X. ; Ning, J.; Yu, M.B.; Kwong, D.-L.
5	Nov-2007	Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices	Wang, X.P.; Lim, A.E.-J.; Yu, H.Y.; Li, M.-F. ; Ren, C.; Loh, W.-Y.; Zhu, C.X. ; Chin, A. ; Trigg, A.D.; Yeo, Y.-C. ; Biesemans, S.; Lo, G.-Q.; Kwong, D.-L.