Full Name
Rapeta V V V Jagannadha Rao
Variants
Rao, Rapeta V.V.V.J.
Rao, R.V.V.V.J.
 
 
 

Publications

Results 1-12 of 12 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
12000A novel method for the De-embedding of S-parameters of double heterojunction δ-doped PHEMTs - Modeling and measurementsRao, R.V.V.V.J. ; Joe, J. ; Chia, Y.W.M. ; Ang, K.S.; Wang, H.; Ng, G.I.
23-Jul-1997Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulatorRao, R.V.V.V.J. ; Chong, T.C. ; Lau, W.S. ; Tan, L.S. ; Lim, N. 
31999Effect of LT-layer thickness on the performance of LT-GaAs and LT-Al0.3Ga0.7As MISFETsRao, Rapeta V.V.V.J. ; Chongt, T.C.; Tan, L.S. ; Lau, W.S. 
41999Effects of thermal stress on low-temperature-grown GaAs and Al0.3Ga0.7As MISFET parametersRao, Rapeta V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. 
51999Experimental determination of on and off state small-signal equivalent circuit of δ-doped PHEMTsRao, Rapeta V.V.V.J. ; Joe, J. ; Chia, Y.W.Michael ; Ang, K.S.; Wang, H.; Ng, G.I.
615-Oct-1998Low frequency noise analysis of LT-GaAs and LT-AI0.3Ga0.7 As MISFET active layersRao, R.V.V.V.J. ; Chong, T.C. ; Lau, W.S. ; Tan, L.S. ; Geng, C. ; Lim, N. 
1471999Low-temperature grown GaAs and Al0.3Ga0.7As MISFETs - characterization and model developmentRao, Rapeta V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. ; Liou, J.J.
88-Jul-1999Method for determining the source and drain resistance of double heterojunction δ-doped PHEMTsRao, R.V.V.V.J. ; Joe, J. ; Chia, Y.W.M. ; Ang, K.S.; Ng, G.I.
91999Physical analytical model for LT-GaAs and LT-Al0.3Ga0.7 As MISFET DevicesRao, R.V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. ; Liou, J.J.
105-Oct-2000Quasianalytical model for LT-GaAs and LT-Al0.3Ga0.7As MISFET devicesRao, R.V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S.; Liou, J.J.
11Jun-2000Thermal stability of MISFET with low-temp molecular-beam epitaxy-grown GaAs and Al0.3Ga0.7As gate InsRao, R.V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. 
12Sep-1999Transient current spectroscopy and frequency dispersion studies of low temperature GaAs and Al0.3Ga0.7As metal-insulator-semiconductor diodesRao, R.V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. ; Lim, N.