Please use this identifier to cite or link to this item: https://doi.org/10.1049/el:19990788
Title: Method for determining the source and drain resistance of double heterojunction δ-doped PHEMTs
Authors: Rao, R.V.V.V.J. 
Joe, J. 
Chia, Y.W.M. 
Ang, K.S.
Ng, G.I.
Issue Date: 8-Jul-1999
Citation: Rao, R.V.V.V.J., Joe, J., Chia, Y.W.M., Ang, K.S., Ng, G.I. (1999-07-08). Method for determining the source and drain resistance of double heterojunction δ-doped PHEMTs. Electronics Letters 35 (14) : 1198-1200. ScholarBank@NUS Repository. https://doi.org/10.1049/el:19990788
Abstract: The source and drain resistances (Rs and Rd) of PHEMTs have been determined by de-embedding the S-parameters of PHEMTs measured at a forward gate bias voltage and zero drain bias voltage using external parasitic elements. External parasitic elements were determined from S-parameters of on-wafer shorts and S-parameters of PHEMTs measured at a pinch-off gate bias voltage and zero drain bias voltage.
Source Title: Electronics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/112266
ISSN: 00135194
DOI: 10.1049/el:19990788
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