Please use this identifier to cite or link to this item:
https://doi.org/10.1049/el:19990788
DC Field | Value | |
---|---|---|
dc.title | Method for determining the source and drain resistance of double heterojunction δ-doped PHEMTs | |
dc.contributor.author | Rao, R.V.V.V.J. | |
dc.contributor.author | Joe, J. | |
dc.contributor.author | Chia, Y.W.M. | |
dc.contributor.author | Ang, K.S. | |
dc.contributor.author | Ng, G.I. | |
dc.date.accessioned | 2014-11-28T04:59:07Z | |
dc.date.available | 2014-11-28T04:59:07Z | |
dc.date.issued | 1999-07-08 | |
dc.identifier.citation | Rao, R.V.V.V.J., Joe, J., Chia, Y.W.M., Ang, K.S., Ng, G.I. (1999-07-08). Method for determining the source and drain resistance of double heterojunction δ-doped PHEMTs. Electronics Letters 35 (14) : 1198-1200. ScholarBank@NUS Repository. https://doi.org/10.1049/el:19990788 | |
dc.identifier.issn | 00135194 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/112266 | |
dc.description.abstract | The source and drain resistances (Rs and Rd) of PHEMTs have been determined by de-embedding the S-parameters of PHEMTs measured at a forward gate bias voltage and zero drain bias voltage using external parasitic elements. External parasitic elements were determined from S-parameters of on-wafer shorts and S-parameters of PHEMTs measured at a pinch-off gate bias voltage and zero drain bias voltage. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1049/el:19990788 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | CENTRE FOR WIRELESS COMMUNICATIONS | |
dc.description.doi | 10.1049/el:19990788 | |
dc.description.sourcetitle | Electronics Letters | |
dc.description.volume | 35 | |
dc.description.issue | 14 | |
dc.description.page | 1198-1200 | |
dc.description.coden | ELLEA | |
dc.identifier.isiut | 000082031900054 | |
Appears in Collections: | Staff Publications |
Show simple item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.