Method for determining the source and drain resistance of double heterojunction δ-doped PHEMTs

Abstract

The source and drain resistances (Rs and Rd) of PHEMTs have been determined by de-embedding the S-parameters of PHEMTs measured at a forward gate bias voltage and zero drain bias voltage using external parasitic elements. External parasitic elements were determined from S-parameters of on-wafer shorts and S-parameters of PHEMTs measured at a pinch-off gate bias voltage and zero drain bias voltage.