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https://doi.org/10.1049/el:19990788
Title: | Method for determining the source and drain resistance of double heterojunction δ-doped PHEMTs | Authors: | Rao, R.V.V.V.J. Joe, J. Chia, Y.W.M. Ang, K.S. Ng, G.I. |
Issue Date: | 8-Jul-1999 | Citation: | Rao, R.V.V.V.J., Joe, J., Chia, Y.W.M., Ang, K.S., Ng, G.I. (1999-07-08). Method for determining the source and drain resistance of double heterojunction δ-doped PHEMTs. Electronics Letters 35 (14) : 1198-1200. ScholarBank@NUS Repository. https://doi.org/10.1049/el:19990788 | Abstract: | The source and drain resistances (Rs and Rd) of PHEMTs have been determined by de-embedding the S-parameters of PHEMTs measured at a forward gate bias voltage and zero drain bias voltage using external parasitic elements. External parasitic elements were determined from S-parameters of on-wafer shorts and S-parameters of PHEMTs measured at a pinch-off gate bias voltage and zero drain bias voltage. | Source Title: | Electronics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/112266 | ISSN: | 00135194 | DOI: | 10.1049/el:19990788 |
Appears in Collections: | Staff Publications |
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