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|Title:||Physical analytical model for LT-GaAs and LT-Al0.3Ga0.7 As MISFET Devices||Authors:||Rao, R.V.V.V.J.
|Issue Date:||1999||Citation:||Rao, R.V.V.V.J.,Chong, T.C.,Tan, L.S.,Lau, W.S.,Liou, J.J. (1999). Physical analytical model for LT-GaAs and LT-Al0.3Ga0.7 As MISFET Devices. Proceedings of the IEEE Hong Kong Electron Devices Meeting : 134-136. ScholarBank@NUS Repository.||Abstract:||An accurate physical analytical model has been described for output current-voltage characteristics and for describing the behavior of electron in LT-GaAs and LT-Al0.3Ga0.7As MISFET devices. The model is derived from basic semiconductor charge analysis. In this model, the Chang-Fetterman equation is used to approximate the electron drift velocity versus electric field. Excellent agreement with experimental results is shown.||Source Title:||Proceedings of the IEEE Hong Kong Electron Devices Meeting||URI:||http://scholarbank.nus.edu.sg/handle/10635/81674|
|Appears in Collections:||Staff Publications|
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