1. ScholarBank@NUS
  2. 1. Staff
  3. Staff Publications
Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81674
DC FieldValue
dc.titlePhysical analytical model for LT-GaAs and LT-Al0.3Ga0.7 As MISFET Devices
dc.contributor.authorRao, R.V.V.V.J.
dc.contributor.authorChong, T.C.
dc.contributor.authorTan, L.S.
dc.contributor.authorLau, W.S.
dc.contributor.authorLiou, J.J.
dc.date.accessioned2014-10-07T03:10:48Z
dc.date.available2014-10-07T03:10:48Z
dc.date.issued1999
dc.identifier.citationRao, R.V.V.V.J.,Chong, T.C.,Tan, L.S.,Lau, W.S.,Liou, J.J. (1999). Physical analytical model for LT-GaAs and LT-Al0.3Ga0.7 As MISFET Devices. Proceedings of the IEEE Hong Kong Electron Devices Meeting : 134-136. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81674
dc.description.abstractAn accurate physical analytical model has been described for output current-voltage characteristics and for describing the behavior of electron in LT-GaAs and LT-Al0.3Ga0.7As MISFET devices. The model is derived from basic semiconductor charge analysis. In this model, the Chang-Fetterman equation is used to approximate the electron drift velocity versus electric field. Excellent agreement with experimental results is shown.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL ENGINEERING
dc.contributor.departmentCENTRE FOR WIRELESS COMMUNICATIONS
dc.description.sourcetitleProceedings of the IEEE Hong Kong Electron Devices Meeting
dc.description.page134-136
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.