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|Title:||Experimental determination of on and off state small-signal equivalent circuit of δ-doped PHEMTs||Authors:||Rao, Rapeta V.V.V.J.
|Issue Date:||1999||Citation:||Rao, Rapeta V.V.V.J.,Joe, J.,Chia, Y.W.Michael,Ang, K.S.,Wang, H.,Ng, G.I. (1999). Experimental determination of on and off state small-signal equivalent circuit of δ-doped PHEMTs. Asia-Pacific Microwave Conference Proceedings, APMC 3 : 892-895. ScholarBank@NUS Repository.||Abstract:||A simple and accurate method for extracting on and off state equivalent circuit for double heterojunction δ-doped PHEMTs was developed, which is quite useful for switching applications. The circuit elements are extracted from the S-parameters of PHEMTs. Parasitic inductances Lg, Ld and Ls were determined from the on-wafer-short 8-parameter data. We have observed skin effect on the series resistive elements of on-wafer-short, which has been given due consideration in our model. The model has been verified by comparing the measured S-parameter data against those calculated from the on and off state equivalent circuits of PHEMTs.||Source Title:||Asia-Pacific Microwave Conference Proceedings, APMC||URI:||http://scholarbank.nus.edu.sg/handle/10635/112247|
|Appears in Collections:||Staff Publications|
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