Full Name
Sundaram Pillay Bala Kumar
(not current staff)
Variants
Bala Kumar, S.
Kumar, S.B.
Kumar, S.
 
 
 
Email
elespbk@nus.edu.sg
 

Publications

Refined By:
Department:  ELECTRICAL & COMPUTER ENGINEERING

Results 1-20 of 32 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
1Jun-2010A simulation study of graphene-nanoribbon tunneling FET with heterojunction channelLam, K.-T.; Seah, D.; Chin, S.-K.; Bala Kumar, S. ; Samudra, G. ; Yeo, Y.-C. ; Liang, G. 
22008A study of spin relaxation on spin transfer switching of a noncollinear magnetic multilayer structureChung, N.L.; Jalil, M.B.A. ; Tan, S.G.; Guo, J. ; Kumar, S.B. 
31-Apr-2011Conductance modulation in graphene nanoribbon under transverse asymmetric electric potentialBala Kumar, S. ; Fujita, T. ; Liang, G. 
42007Effect of capping layer on the spin accumulation and magnetoresistance of a current-perpendicular-to-plane spin valveBala Kumar, S. ; Tan, S.G. ; Jalil, M.B.A. 
5Jun-2007Effect of interfacial spin flip and momentum scattering on magnetoresistanceKumar, S.B. ; Tan, S.G. ; Jalil, M.B.A. 
6Apr-2010Effect of Ribbon Width and doping concentration on device performance of graphene nanoribbon tunneling field-effect transistorsLam, K.-T.; Chin, S.-K.; Seah, D.W.; Bala Kumar, S. ; Liang, G. 
72006Electrical control of ballistic spin-dependent conductance through magneto-electric barriers in the 2D-electron gas of GaAs heterostructureTan, S.; Jalil, M. ; Kumar, S. ; Teo, K. ; Zheng, Y.; Liew, T.
89-Sep-2009High and tunable spin current induced by magnetic-electric fields in a single-mode spintronic deviceBala Kumar, S. ; Tan, S.G.; Jalil, M.B.A. ; Liang, G.-C.
922-Aug-2011High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effectsLiang, G. ; Bala Kumar, S. ; Jalil, M.B.A. ; Tan, S.G.
1029-Oct-2012High magnetoresistance in graphene nanoribbon heterojunctionBala Kumar, S. ; Jalil, M.B.A. ; Tan, S.G.
112007Influence of spin relaxation on magnetoresistanceTan, S.G. ; Jalil, M.B.A. ; Bala Kumar, S. 
122008Interfacial resistance and spin flip effects on the magnetoresistance of a current perpendicular to plane spin valveChung, N.L.; Jalil, M.B.A. ; Tan, S.G. ; Bala Kumar, S. 
1328-Aug-2013Klein tunneling in graphene systems under the influence of magnetic fieldBala Kumar, S. ; Jalil, M.B.A. ; Tan, S.G.
142006Layer thickness effect on the magnetoresistance of a current-perpendicular- to-plane spin valveTan, S.G. ; Jalil, M.B.A. ; Kumar, S.B. ; Han, G.C. ; Zheng, Y.K.
152006Magnetoresistance effects arising from interfacial resistance in a current-perpendicular-to-plane spin-valve trilayerKumar, S.B. ; Jalil, M.B.A. ; Tan, S.G. ; Leong, Z.Y.
16Mar-2007Magnetoresistance modulation due to interfacial conductance of current perpendicular-to-plane spin valvesLeong, Z.Y.; Tan, S.G.; Jalil, M.B.A. ; Kumar, S.B. ; Han, G.C.
172006Magnetoresistive behavior of current-perpendicular-to-plane trilayer with half-metal insertionsBae, S. ; Tan, S.G.; Jalil, M.B.A. ; Kumar, S.B. ; Teo, K.L. ; Leong, Z.Y.; Liew, T.
181-Aug-2010Magnetoresistive effect in graphene nanoribbon due to magnetic field induced band gap modulationKumar, S.B. ; Jalil, M.B.A. ; Tan, S.G.; Liang, G. 
192006MR enchancement in CPP spin valve by insertion of a ferromagnetic layer within the spacer layerKumar, S. ; Tan, S.; Jalil, M. ; Teo, K. 
202008Nanoelectronic logic device based on the manipulation of magnetic and electric barriersKumar, S.B. ; Tan, S.G.; Jalil, M.B.A. ; Cheung, P.Q.; Jiang, Y.