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|Title:||Layer thickness effect on the magnetoresistance of a current-perpendicular- to-plane spin valve||Authors:||Tan, S.G.
|Issue Date:||2006||Citation:||Tan, S.G., Jalil, M.B.A., Kumar, S.B., Han, G.C., Zheng, Y.K. (2006). Layer thickness effect on the magnetoresistance of a current-perpendicular- to-plane spin valve. Journal of Applied Physics 100 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2345579||Abstract:||We performed a theoretical study and analysis of the effect of modifying the layer thicknesses of a current-perpendicular-to-plane (CPP) spin valve multilayer on its magnetoresistance (MR) ratio. An increase in the ferromagnetic (FM) layer thickness results in (i) an increase in the spin-dependent component of its total resistance, thereby resulting in higher MR, but also leads to (ii) greater spin relaxation in that layer and (iii) an anomalous MR effect in the high resistance regime, both of which suppress the MR ratio. The interplay of these effects results in a complex MR dependence on FM thickness, instead of the simple monotonic MR increase predicted by the two-current model. It also explains the existence of an optimum FM thickness for maximum MR ratio, as evidenced by experimental data. Finally, we consider the MR dependence on the strength and spin selectivity of interfacial resistances, which can either arise naturally or be engineered in the spin valve structure. The study of the combined effects of the FM layer thickness and resistivity, the MR suppression in the high resistive limit, and the competitive spin-dependent scattering in the bulk and at the interfaces is essential for optimizing the structure and material of a practical CPP spin valve to achieve the maximum MR ratio. © 2006 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/50968||ISSN:||00218979||DOI:||10.1063/1.2345579|
|Appears in Collections:||Staff Publications|
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