Magnetoresistive behavior of current-perpendicular-to-plane trilayer with half-metal insertions

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2178008

Title:	Magnetoresistive behavior of current-perpendicular-to-plane trilayer with half-metal insertions
Authors:	Bae, S. Tan, S.G. Jalil, M.B.A. Kumar, S.B. Teo, K.L. Leong, Z.Y. Liew, T.
Issue Date:	2006
Citation:	Bae, S., Tan, S.G., Jalil, M.B.A., Kumar, S.B., Teo, K.L., Leong, Z.Y., Liew, T. (2006). Magnetoresistive behavior of current-perpendicular-to-plane trilayer with half-metal insertions. Journal of Applied Physics 99 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2178008
Abstract:	We investigated the effect of half-metal (HM) conductivity on the magnetoresistance (MR) of the pseudo spin-valve (PSV) structure. We derived a PSV MR model based on the spin transport theory of van Son [Phys. Rev. Lett. 58, 2271 (1987)] and Rashba [Eur. Phys. J. B 29, 513 (2002)] to show that for HM intrinsic polarization (α) below a critical value, the PSV MR shows an anomalous behavior of decreasing with increasing HM resistivity. We attributed this to the competition between the HM and the ferromagnetic (FM) layers in contributing to the overall device MR, and derived the expression for critical α. © 2006 American Institute of Physics.
Source Title:	Journal of Applied Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/56577
ISSN:	00218979
DOI:	10.1063/1.2178008
Appears in Collections:	Staff Publications

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