Please use this identifier to cite or link to this item:
|Title:||Magnetoresistive behavior of current-perpendicular-to-plane trilayer with half-metal insertions||Authors:||Bae, S.
|Issue Date:||2006||Citation:||Bae, S., Tan, S.G., Jalil, M.B.A., Kumar, S.B., Teo, K.L., Leong, Z.Y., Liew, T. (2006). Magnetoresistive behavior of current-perpendicular-to-plane trilayer with half-metal insertions. Journal of Applied Physics 99 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2178008||Abstract:||We investigated the effect of half-metal (HM) conductivity on the magnetoresistance (MR) of the pseudo spin-valve (PSV) structure. We derived a PSV MR model based on the spin transport theory of van Son [Phys. Rev. Lett. 58, 2271 (1987)] and Rashba [Eur. Phys. J. B 29, 513 (2002)] to show that for HM intrinsic polarization (α) below a critical value, the PSV MR shows an anomalous behavior of decreasing with increasing HM resistivity. We attributed this to the competition between the HM and the ferromagnetic (FM) layers in contributing to the overall device MR, and derived the expression for critical α. © 2006 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/56577||ISSN:||00218979||DOI:||10.1063/1.2178008|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
WEB OF SCIENCETM
checked on Nov 20, 2020
checked on Nov 24, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.