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Title: Effect of interfacial spin flip and momentum scattering on magnetoresistance
Authors: Kumar, S.B. 
Tan, S.G. 
Jalil, M.B.A. 
Keywords: Interfacial resistance
Interfacial spin flip
Magnetoresistance (MR)
Issue Date: Jun-2007
Citation: Kumar, S.B., Tan, S.G., Jalil, M.B.A. (2007-06). Effect of interfacial spin flip and momentum scattering on magnetoresistance. IEEE Transactions on Magnetics 43 (6) : 2863-2865. ScholarBank@NUS Repository.
Abstract: In this paper, we have developed a model and performed a numerical analysis using the spin-drift diffusion method to study the effect of interfacial spin scattering on the magnetoresistance of a simple trilayer spin-valve structure. We have modelled the interfaces as ultra-thin layers, in the limit of the layer thickness approaching zero. Our analysis is focused on three important interfacial parameters, i.e., interfacial resistance (RI), interfacial spin selectivity (γ), and interfacial spin-flip parameter (ζ). We compared the relative contribution of bulk scattering (BS) and interfacial scattering (IS) to the overall MR. We have noticed that when γ is greater (smaller) than a critical value, γC, then MR increases with increasing (decreasing) RI. Contrary to general expectation, larger ferromagnetic (FM) resistivity results in lower MR if γ > γC. Finally, we have shown the effect of ζ on MR. At high (low) ζ, which signifies spin coherence at the interface is conserved (depolarized), MR increases (decreases). We have also noted the competition between γ and ζ in contributing towards overall MR. We have also shown that the negative effect on MR due to spin flip can be minimized by using higher RI. © 2007 IEEE.
Source Title: IEEE Transactions on Magnetics
ISSN: 00189464
DOI: 10.1109/TMAG.2007.892570
Appears in Collections:Staff Publications

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