Lee Tek Po,Rinus

Collaboration Map View Statistics Email Alert RSS Feed

Full Name

Lee Tek Po,Rinus

(not current staff)

Variants

Lee, R.T.P.
Lee, R.T.-P.

Main Affiliation

ELECTRICAL AND COMPUTER ENGINEERING

Faculty

FAC OF ENGINEERING

eleltpr@nus.edu.sg

Refined By:

Type: Article

Department: ELECTRICAL AND COMPUTER ENGINEERING

Author: Samudra, G.S.

Subject: Stress

Results 1-6 of 6 (Search time: 0.004 seconds).

Refman EndNote Bibtex RefWorks Excel CSV PDF Send via email

	Issue Date	Title	Author(s)
1	Feb-2008	A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET	Tan, K.-M.; Zhu, M. ; Fang, W.-W.; Yang, M.; Liow, T.-Y.; Lee, R.T.P. ; Hoe, K.M.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C.
2	Sep-2006	Drive-current enhancement in FinFETs using gate-induced stress	Tan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Tung, C.-H.; Samudra, G.S. ; Yoo, W.-J. ; Yeo, Y.-C.
3	Nov-2007	N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layer	Liow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Tung, C.-H.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C.
4	Jan-2008	Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors	Liow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Zhu, M. ; Hoe, K.-M.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C.
5	2008	Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content	Liow, T.-Y.; Tan, K.-M.; Weeks, D.; Lee, R.T.P. ; Zhu, M. ; Hoe, K.-M.; Tung, C.-H.; Bauer, M.; Spear, J.; Thomas, S.G.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C.
6	Oct-2007	Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors	Tan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Hoe, K.M.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C.