1. ScholarBank@NUS

Thye Shen, Andrew Wee

rp02822

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Full Name
Thye Shen, Andrew Wee
Variants
Wee, A.T.
Wee, A.T.S.
Wee A.T.S.
Thye Shen Wee, A.
Wee, A.T.S
Thye-Shen Wee, A.
Wee A.T.S
Wee, S.
Wee, A.T.-S.
Wee, A.T.A.
WEE, ANDREW THYE SHEN
Wee, T.S.
Wee, A.
Wee, Andrew T.S.
Wee, T.S.A.
Wee Thye Shen, Andrew
 
Main Affiliation
 
Faculty
 
Email
phyweets@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2023]
Date Issued:  [2000 TO 2009]

Results 21-40 of 337 (Search time: 0.008 seconds).

Issue DateTitleAuthor(s)
21Feb-2007Catalyst-free template-synthesis of ZnO nanopetals at 60 °CPan, H. ; Feng, Y.P. ; Lin, J. ; Liu, C.J. ; Wee, T.S. 
22Sep-2007Characterization and field emission performance of electrochemically synthesized FeOOH nanowallsChin, K.C. ; Cui, H. ; Sow, C.H. ; Sheu, F.S. ; Van, L.H. ; Gao, X. ; Wee, A.T.S. 
23Sep-2004Characterization of Cu/Ta/ultra low-k porous polymer structures for multilevel interconnectsYang, L.Y.; Zhang, D.H.; Li, C.Y.; Liu, R. ; Wee, A.T.S. ; Foo, P.D.
24Feb-2004Characterization of delta-doped B/Si multilayers by low-energy secondary ion mass spectrometryLiu, R. ; Wee, A.T.S. ; Shen, D.H.; Takenaka, H.
25May-2005Characterizations of InzGa1-zAs1-x-y Nx Sby P-i-N structures grown on GaAs by molecular beam epitaxyCheah, W.K.; Fan, W.J.; Tan, K.H.; Yoon, S.F.; Zhang, D.H.; Mei, T.; Liu, R. ; Wee, A.T. 
2630-Nov-2008Charge transfer across the molecule/metal interface using the core hole clock techniqueWang, L. ; Chen, W. ; Wee, A.T.S. 
279-May-2005Chemical and dielectrical characteristics of ultrathin oxides grown by atomic force microscopy and scanning electron beamXie, X.N. ; Chung, H.J.; Sow, C.H.; Wee, A.T.S. 
2823-Jun-2008Chemical bonding of fullerene and fluorinated fullerene on bare and hydrogenated diamondOuyang, T.; Loh, K.P. ; Qi, D. ; Wee, A.T.S. ; Nesladek, M.
2922-Sep-2009Chemically linked AuNP-alkane network for enhanced photoemission and field emissionXie, X.N. ; Gao, X. ; Qi, D. ; Xie, Y.; Shen, L.; Yang, S.-W.; Sow, C.H. ; Wee, A.T.S. 
3015-Jun-2004Co-doping carbon tetrabromide (CBr4) and antimony (Sb) on GaAs [1 0 0] in solid source molecular beam epitaxyCheah, W.K.; Fan, W.J.; Yoon, S.F.; Liu, R. ; Wee, A.T.S. 
3113-Aug-2007CO3O4 nanostructures with different morphologies and their field-emission propertiesVarghese, B. ; Hoong, T.C.; Yanwu, Z. ; Reddy, M.V. ; Chowdari, B.V.R. ; Wee, A.T.S. ; Vincent, T.B.C. ; Lim, C.T. ; Sow, C.-H. 
32Oct-2009Cobalt coated electrodes for high efficiency PEM fuel cells by plasma sputtering depositionTang, Z. ; Poh, C.K.; Chin, K.C. ; Chua, D.H.C. ; Lin, J.; Wee, A.T.S. 
3327-Mar-2006Cobalt nanowire fabrication on activated nitrogen-templated Cu(210) surfaceXu, H. ; Gao, X. ; Sun, Y.Y. ; Wee, A.T.S. 
342008Cobalt-catalyzed hydrogen desorption from the LiNH2-LiBH 4 systemTang, W.S.; Wu, G. ; Liu, T.; Wee, A.T.S. ; Yong, C.K. ; Xiong, Z. ; Hor, A.T.S. ; Chen, P. 
3510-May-2006Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integrationYang, L.Y.; Zhang, D.H.; Li, C.Y.; Liu, R. ; Lu, P.W.; Foo, P.D.; Wee, A.T.S. 
36Aug-2004Comparative study of Ta and TaN(N) in the barrier/ultra low k structures for deep submicron integrated circuitsYang, L.Y.; Zhang, D.H.; Li, C.Y.; Liu, R. ; Wee, A.T.S. ; Foo, P.D.
373-Jun-2002Comparison of nitrogen compositions in the as-grown GaNxAs 1-x on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopyFan, W.J.; Yoon, S.F.; Ng, T.K.; Wang, S.Z.; Loke, W.K.; Liu, R. ; Wee, A. 
3823-Oct-2000Compositional mapping of the argon-methane-hydrogen system for polycrystalline to nanocrystalline diamond film growth in a hot-filament chemical vapor deposition systemLin, T. ; Yu, G.Y. ; Wee, A.T.S. ; Shen, Z.X. ; Loh, K.P. 
3921-Jun-2006Configuration-dependent interface charge transfer at a molecule-metal junctionWang, L. ; Liu, L. ; Chen, W. ; Feng, Y. ; Wee, A.T.S. 
402007Conformational degree and molecular orientation in rubrene film by in situ x-ray absorption spectroscopyWang, L. ; Chen, S. ; Liu, L. ; Qi, D. ; Gao, X. ; Subbiah, J. ; Swaminathan, S. ; Wee, A.T.