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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Department:  ELECTRICAL & COMPUTER ENGINEERING

Results 21-40 of 193 (Search time: 0.011 seconds).

Issue DateTitleAuthor(s)
21Apr-2008Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widthsLee, R.T.-P. ; Liow, T.-Y.; Tan, K.-M.; Lim, A.E.-J.; Koh, A.T.-Y.; Zhu, M. ; Lo, G.-Q.; Samudra, G.S. ; Chi, D.Z.; Yeo, Y.-C. 
222008An enabling device technology for future superjunction power integrated circuitsChen, Y.; Liang, Y.C. ; Samudra, G.S. ; Buddharaju, K.D.; Feng, H.
232006An FPGA based digital control design for high-frequency DC-DC convertersSingh, R.P.; Khambadkone, A.M. ; Samudra, G.S. ; Liang, Y.C. 
242008Band alignment between amorphous Ge2 Sb2 Te5 and prevalent complementary-metal-oxide-semiconductor materialsFang, L.W.-W.; Pan, J.-S.; Zhao, R.; Shi, L.; Chong, T.-C.; Samudra, G. ; Yeo, Y.-C. 
252008Band edge NMOS work function for nickel fully-silicided (FUSI) gate obtained by the insertion of novel Y-, Tb-, and Yb-based interlayersLim, A.E.-J.; Lee, R.T.P. ; Wang, X.P.; Hwang, W.S.; Tung, C.-H.; Lai, D.M.Y.; Samudra, G. ; Kwong, D.-L.; Yeo, Y.-C. 
262007Beneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETsAng, K.-W.; Lin, J.; Tung, C.-H.; Balasubramanian, N.; Samudra, G. ; Yeo, Y.-C. 
272007Carrier backscattering characteristics of strained N-MOSFET featuring silicon-carbon source/drain regionsAng, K.-W.; Chin, H.-C.; Chui, K.-J.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. 
28Nov-2007Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regionsAng, K.-W.; Chin, H.-C.; Chui, K.-J.; Li, M.-F. ; Samudra, G.S. ; Yeo, Y.-C. 
292006Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancementLiow, T.-Y.; Tan, K.-M.; Chin, H.-C.; Lee, R.T.P. ; Tung, C.-H.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
302009Characterization and modeling of subfemtofarad nanowire capacitance using the CBCM techniqueZhao, H.; Kim, R.; Paul, A.; Luisier, M.; Klimeck, G.; Ma, F.-J. ; Rustagi, S.C.; Samudra, G.S. ; Singh, N.; Lo, G.-Q.; Kwong, D.-L.
312006Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectricShen, C.; Li, M.-F. ; Foo, C.E.; Yang, T.; Huang, D.M.; Yaps, A.; Samudra, G.S. ; Yeo, Y.-C. 
322009Charge-based capacitance measurement technique for nanoscale devices: Accuracy assessment based on TCAD simulationsZhao, H.; Rustagi, S.C.; Ma, F.-J. ; Samudra, G.S. ; Singh, N.; Lo, G.Q.; Kwong, D.-L.
33Jul-2008Cointegration of in situ doped silicon-carbon source and silicon-carbon I-region in P-channel silicon nanowire impact-ionization transistorToh, E.-H.; Wang, G.H.; Chan, L.; Weeks, D.; Bauer, M.; Spear, J.; Thomas, S.G.; Samudra, G. ; Yeo, Y.-C. 
342008Compact HSPICE model for IMOS deviceLin, J. ; Toh, E.H.; Shen, C.; Sylvester, D.; Heng, C.H. ; Samudra, G. ; Yeo, Y.C. 
3525-Apr-2008Concept of strain-transfer-layer and integration with graded silicon-germanium source/drain stressors for p-type field effect transistor performance enhancementWang, G.H.; Toh, E.-H.; Tung, C.-H.; Tripathy, S.; Samudra, G.S. ; Yeo, Y.-C. 
362009Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drainWong, H.-S.; Ang, K.-W.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
37Jul-2007Design of gradient oxide-bypassed superjunction power MOSFET devicesChen, Y.; Liang, Y.C. ; Samudra, G.S. 
382005Design of superjunction power MOSFET devices using the gradient oxide-bypassed structureChen, Y.; Liang, Y.C. ; Samudra, G.S. 
3925-Apr-2008Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium sourceToh, E.-H.; Wang, G.H.; Chan, L.; Sylvester, D.; Heng, C.-H. ; Samudra, G.S. ; Yeo, Y.-C. 
402007Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimizationToh, E.-H.; Wang, G.H.; Samudra, G. ; Yeo, Y.-C.