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Choi, W.K.

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Full Name
Choi, W.K.
Variants
Choi, W.-K.
Choi Wee Kion
Choi, Wee kiong
Choi, W.K
Choi, W.
Choi Wee Kiong
Choi, W.K.
 
Main Affiliation
 
Faculty
 
Email
elechoi@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Date Issued:  2004
Type:  Article

Results 1-10 of 10 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
12004A MONOS-type flash memory using a high-k HfAlO charge trapping layerTan, Y.N.; Chim, W.K. ; Cho, B.J. ; Choi, W.K. 
220-Sep-2004Clarifying the origin of near-infrared electroluminescence peaks for nanocrystalline germanium in metal-insulator-silicon structuresKan, E.W.H.; Chim, W.K. ; Lee, C.H.; Choi, W.K. ; Ng, T.H.
3Sep-2004Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectricNg, T.H.; Ho, V.; Teo, L.W.; Tay, M.S.; Koh, B.H.; Chim, W.K. ; Choi, W.K. ; Du, A.Y.; Tung, C.H.
415-Apr-2004Investigation of thermal effect on electrical properties of Si 0.887Ge0.113 and Si0.887-yGe 0.113Cy filmsFeng, W.; Choi, W.K. 
531-May-2004Minimization of germanium penetration, nanocrystal formation, charge storage, and retention in a trilayer memory structure with silicon nitride/hafnium dioxide stack as the tunnel dielectricNg, T.H.; Chim, W.K. ; Choi, W.K. ; Ho, V.; Teo, L.W.; Du, A.Y.; Tung, C.H.
615-Mar-2004Origin of charge trapping in germanium nanocrystal embedded SiO 2 system: Role of interfacial traps?Kan, E.W.H.; Choi, W.K. ; Chim, W.K. ; Fitzgerald, E.A.; Antoniadis, D.A.
7Jul-2004Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage layerTan, Y.-N.; Chim, W.-K. ; Cho, B.J. ; Choi, W.-K. 
81-May-2004Quantum mechanical modeling of gate capacitance and gate current in tunnel dielectric stack structures for nonvolatile memory applicationKoh, B.H.; Chim, W.K. ; Ng, T.H.; Zheng, J.X.; Choi, W.K. 
9Mar-2004Stability and composition of Ni-germanosilicided Si 1-xGe x filmsPey, K.L.; Chattopadhyay, S.; Choi, W.K. ; Miron, Y.; Fitzgerald, E.A.; Antoniadis, D.A.; Osipowicz, T. 
10Sep-2004The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge 0.25 and (100)Si at 400 °CJin, L.J.; Pey, K.L. ; Choi, W.K. ; Fitzgerald, E.A.; Antoniadis, D.A.; Pitera, A.J.; Lee, M.L.; Chi, D.Z.; Tung, C.H.