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https://doi.org/10.1039/c8nr07498d
Title: | Interlayer interactions in 2D WS2/MoS2 heterostructures monolithically grown by in situ physical vapor deposition | Authors: | Yang, Weifeng Kawai, Hiroyo Bosman, Michel Tang, Baoshan Chai, Jianwei Tay, Wei Le Yang, Jing Seng, Hwee Leng Zhu, Huili Gong, Hao Liu, Hongfei Goh, Kuan Eng Johnson Wang, Shijie Chi, Dongzhi |
Keywords: | Science & Technology Physical Sciences Technology Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Chemistry Science & Technology - Other Topics Materials Science Physics TOTAL-ENERGY CALCULATIONS ACTIVE EDGE SITES EPITAXIAL-GROWTH BAND-STRUCTURE MOS2 MONOLAYER GRAPHENE HETEROJUNCTIONS OFFSETS OXIDES |
Issue Date: | 28-Dec-2018 | Publisher: | ROYAL SOC CHEMISTRY | Citation: | Yang, Weifeng, Kawai, Hiroyo, Bosman, Michel, Tang, Baoshan, Chai, Jianwei, Tay, Wei Le, Yang, Jing, Seng, Hwee Leng, Zhu, Huili, Gong, Hao, Liu, Hongfei, Goh, Kuan Eng Johnson, Wang, Shijie, Chi, Dongzhi (2018-12-28). Interlayer interactions in 2D WS2/MoS2 heterostructures monolithically grown by in situ physical vapor deposition. NANOSCALE 10 (48) : 22927-22936. ScholarBank@NUS Repository. https://doi.org/10.1039/c8nr07498d | Abstract: | The understanding of the interlayer interactions in vertical heterostructures of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is essential to exploit their advanced functions for next-generation optoelectronics and electronics. Here we demonstrate a monolithic stacking of TMDC heterostructures with 2D MoS2 and WS2 layers via in situ physical vapor deposition. We find that the kinetically sputtered atoms are able to overcome the interlayer van der Waals forces between the vertical layers, leading to a substantial number of randomly oriented stacks with various twist angles. Our X-ray photoelectron spectroscopy results reveal a type II heterojunction for 2D WS2/MoS2, showing a band alignment with a conduction band offset of 0.41 eV and a valence band offset of 0.25 eV. In particular, we observed a remarkable interlayer coupling and associated exciton relaxation at the hetero-interface due to the misoriented stacks. By analyzing the band structures and charge densities of the vertical stacks using first-principles calculations, we reveal that the interlayer coupling is a function of the interlayer distance and is relatively insensitive to the angle of misorientation. | Source Title: | NANOSCALE | URI: | https://scholarbank.nus.edu.sg/handle/10635/245385 | ISSN: | 2040-3364 2040-3372 |
DOI: | 10.1039/c8nr07498d |
Appears in Collections: | Staff Publications Elements |
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