Please use this identifier to cite or link to this item: https://doi.org/10.1126/sciadv.aaw2347
Title: Giant gate-tunable bandgap renormalization and excitonic effects in a 2D semiconductor
Authors: Qiu, Zhizhan 
Trushin, Maxim 
Fang, Hanyan
Verzhbitskiy, Ivan 
Gao, Shiyuan
Laksono, Evan 
Yang, Ming 
Lyu, Pin
Li, Jing 
Su, Jie 
Telychko, Mykola 
Watanabe, Kenji
Taniguchi, Takashi
Wu, Jishan 
Castro Neto, AH 
Yang, Li
Eda, Goki 
Adam, Shaffique 
Lu, Jiong 
Keywords: Science & Technology
Multidisciplinary Sciences
Science & Technology - Other Topics
ATOMICALLY THIN
HETEROSTRUCTURES
GRAPHENE
TRANSISTORS
CONTACTS
MOS2
Issue Date: 1-Jul-2019
Publisher: AMER ASSOC ADVANCEMENT SCIENCE
Citation: Qiu, Zhizhan, Trushin, Maxim, Fang, Hanyan, Verzhbitskiy, Ivan, Gao, Shiyuan, Laksono, Evan, Yang, Ming, Lyu, Pin, Li, Jing, Su, Jie, Telychko, Mykola, Watanabe, Kenji, Taniguchi, Takashi, Wu, Jishan, Castro Neto, AH, Yang, Li, Eda, Goki, Adam, Shaffique, Lu, Jiong (2019-07-01). Giant gate-tunable bandgap renormalization and excitonic effects in a 2D semiconductor. SCIENCE ADVANCES 5 (7). ScholarBank@NUS Repository. https://doi.org/10.1126/sciadv.aaw2347
Abstract: Copyright © 2019 The Authors, Understanding the remarkable excitonic effects and controlling the exciton binding energies in two-dimensional (2D) semiconductors are crucial in unlocking their full potential for use in future photonic and optoelectronic devices. Here, we demonstrate large excitonic effects and gate-tunable exciton binding energies in single-layer rhenium diselenide (ReSe2) on a back-gated graphene device. We used scanning tunneling spectroscopy and differential reflectance spectroscopy to measure the quasiparticle electronic and optical bandgap of single-layer ReSe2, respectively, yielding a large exciton binding energy of 520 meV. Further, we achieved continuous tuning of the electronic bandgap and exciton binding energy of monolayer ReSe2 by hundreds of milli–electron volts through electrostatic gating, attributed to tunable Coulomb interactions arising from the gate-controlled free carriers in graphene. Our findings open a new avenue for controlling the bandgap renormalization and exciton binding energies in 2D semiconductors for a wide range of technological applications.
Source Title: SCIENCE ADVANCES
URI: https://scholarbank.nus.edu.sg/handle/10635/167687
ISSN: 2375-2548
DOI: 10.1126/sciadv.aaw2347
Appears in Collections:Staff Publications
Elements

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
Giant gate-tunable bandgap renormalization_compressed.pdf298.67 kBAdobe PDF

OPEN

PublishedView/Download

SCOPUSTM   
Citations

5
checked on Jun 27, 2020

Page view(s)

26
checked on Jul 2, 2020

Download(s)

2
checked on Jul 2, 2020

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.