Results 1-6 of 6 (Search time: 0.014 seconds).

Issue DateTitleAuthor(s)
129-Jul-2021A barium titanate‐on‐oxide insulator optoelectronics platformYu Cao ; Siew Li Tan ; Eric Jun Hao Cheung ; Shawn Yohanes Siew ; Changjian Li ; Yan Liu ; Chi Sin Tang ; Manohar Lal ; Guanyu Chen ; Karim Dogheche; Ping Yang ; Steven Pennycook; Andrew Thye Shen Wee ; Soojin Chua ; Elhadj Dogheche; Thirumalai Venkatesan ; Aaron Danner 
26-Mar-2022Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C)Umesh Chand ; Chen Chun-Kuei; Manohar Lal ; Sonu Hooda; Hasita Veluri; Zihang Fang; Shih-Hao Tsai; Aaron Voon-Yew Thean 
311-Oct-2022First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic SwitchChun-Kuei Chen; Zihang Fang; Sonu Hooda; Manohar Lal ; Umesh Chand ; Zefeng Xu; Jieming Pan ; Shih-Hao Tsai; Evgeny Zamburg ; Aaron Voon-Yew Thean 
429-May-2021Modification of thermal transport in few-layer MoS 2 by atomic-level defect engineeringYunshan Zhao ; Minrui Zheng ; Jing Wu ; Xin Guan ; Ady Suwardi ; Yida Li ; Manohar Lal ; Guofeng Xie; Gang Zhang; Lifa Zhang ; John TL Thong 
56-Sep-2020Nanometer-Scale Uniform Conductance Switching in Molecular MemristorsSreetosh Goswami ; Debalina Deb; Agnès Tempez; Marc Chaigneau; SANTI PRASAD RATH ; Manohar Lal ; Ariando ; R. Stanley Williams; SREEBRATA GOSWAMI ; Thirumalai Venkatesan 
612-Jun-2022Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ION at VDS 1V, High µ-84 cm2/V-s and1T-1RRAM Memory Cell Demonstration Memory Implications for Energy-Efficient Deep-Learning ComputingUmesh Chand ; Mohamed M Sabry Aly; Manohar Lal ; Chen Chun-Kuei; Sonu Hooda; Shih-Hao Tsai; Zihang Fang; Hasita Veluri; Aaron Voon-Yew Thean