Please use this identifier to cite or link to this item: https://doi.org/10.1109/EDTM53872.2022.9798261
Title: Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C)
Authors: Umesh Chand 
Chen Chun-Kuei
Manohar Lal 
Sonu Hooda
Hasita Veluri
Zihang Fang
Shih-Hao Tsai
Aaron Voon-Yew Thean 
Issue Date: 6-Mar-2022
Publisher: IEEE
Citation: Umesh Chand, Chen Chun-Kuei, Manohar Lal, Sonu Hooda, Hasita Veluri, Zihang Fang, Shih-Hao Tsai, Aaron Voon-Yew Thean (2022-03-06). Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C). 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). ScholarBank@NUS Repository. https://doi.org/10.1109/EDTM53872.2022.9798261
Rights: CC0 1.0 Universal
Abstract: In this work, we report a facile approach to significantly improve the electrical performances of a bottom-gated zinc oxide (ZnO) FET through In-situ annealing treatment of ZnO channel layer. We demonstrated ZnO FETs with extremely scaled channel thickness t ZnO of 3 nm, achieving low SS of 83 mV/decade and the highest µeff of 86 cm2/V•s. We offered insights into the sensitive role of interlayer dielectric passivation on oxide device stability, often neglected by prior work
Source Title: 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
URI: https://scholarbank.nus.edu.sg/handle/10635/232257
ISBN: 978-1-6654-2179-9
DOI: 10.1109/EDTM53872.2022.9798261
Rights: CC0 1.0 Universal
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