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https://doi.org/10.1109/EDTM53872.2022.9798261
| Title: | Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C) | Authors: | Umesh Chand Chen Chun-Kuei Manohar Lal Sonu Hooda Hasita Veluri Zihang Fang Shih-Hao Tsai Aaron Voon-Yew Thean |
Issue Date: | 6-Mar-2022 | Publisher: | IEEE | Citation: | Umesh Chand, Chen Chun-Kuei, Manohar Lal, Sonu Hooda, Hasita Veluri, Zihang Fang, Shih-Hao Tsai, Aaron Voon-Yew Thean (2022-03-06). Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C). 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). ScholarBank@NUS Repository. https://doi.org/10.1109/EDTM53872.2022.9798261 | Rights: | CC0 1.0 Universal | Abstract: | In this work, we report a facile approach to significantly improve the electrical performances of a bottom-gated zinc oxide (ZnO) FET through In-situ annealing treatment of ZnO channel layer. We demonstrated ZnO FETs with extremely scaled channel thickness t ZnO of 3 nm, achieving low SS of 83 mV/decade and the highest µeff of 86 cm2/V•s. We offered insights into the sensitive role of interlayer dielectric passivation on oxide device stability, often neglected by prior work | Source Title: | 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) | URI: | https://scholarbank.nus.edu.sg/handle/10635/232257 | ISBN: | 978-1-6654-2179-9 | DOI: | 10.1109/EDTM53872.2022.9798261 | Rights: | CC0 1.0 Universal |
| Appears in Collections: | Staff Publications Elements |
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| Extremely-_Scaled_Channel_Thickness_ZnO_FET_with_High_Mobility_86_cm2_V-s_Low_SS_of_83mV_dec_and_Low_Thermal_Budget_Process_lt300C.pdf | 1.37 MB | Adobe PDF | CLOSED | None |
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