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Ling Chung Ho

rp09495

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Full Name
Ling Chung Ho
(not current staff)
Variants
Ling, C.-H.
Ling, C.
Ling, C.H.
Ling, Chung Ho
Ling, Chung-Ho
 
Main Affiliation
 
Faculty
 
Email
eleling@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [1905 TO 1999]
Date Issued:  [1980 TO 1989]
Type:  Article

Results 1-18 of 18 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
1Jul-1984A diffusion model for carrier transport in a polycrystalline filmLing, C.H. 
2Jul-1985COMPUTATION OF ELECTRON AND HOLE QUASI-FERMI LEVELS IN POLYCRYSTALLINE SILICON FILMS UNDER UNIFORM ILLUMINATION AND ZERO BIAS.Ling, Chung Ho 
3Sep-1985EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON NITRIDE FILMS PREPARED IN THE TEMPERATURE RANGE 50-300 degree C.Ling, C.H. ; Kwok, C.Y.; Prasad, K.
4Jul-1985Electron and hole quasi-fermi levels in the vicinity of a grain boundary under uniform illumination: An approximate method of computationLing, C.H. ; Kwok, C.Y.
5Sep-1986Frequency dependence of MOS capacitance in strong inversion and at elevated temperaturesLing, C.H. ; Kwok, C.Y.; Chan, E.G.; Tay, T.M.
6Sep-1986Frequency dependence of MOS capacitance in strong inversion and at elevated temperaturesLing, C.H. ; Kwok, C.Y.; Chan, E.G.; Tay, T.M.
71987Observation of a high-resistance to a low-resistance transition in a silicon bicrystalLing, C.H. 
81987Observation of a high-resistance to a low-resistance transition in a silicon bicrystalLing, C.H. 
9Nov-1989Observation of zero temperature coefficient of capacitance in the MOS capacitorLing, C.H. 
10Nov-1989Observation of zero temperature coefficient of capacitance in the MOS capacitorLing, C.H. 
111985Quasi-Fermi level variation in the space-charge region of a grain boundaryLing, C.H. ; Kwok, C.Y.; Tay, T.M.
121-Jan-1985QUASI-FERMI LEVEL VARIATION IN THE SPACE-CHARGE REGION OF A GRAIN BOUNDARY.Ling, C.H. ; Kwok, C.Y.; Tay, T.M.
13May-1985RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.Ling, C.H. ; Kwok, C.Y.; Prasad; K.
14May-1985RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.Ling, C.H. ; Kwok, C.Y.; Prasad; K.
15Mar-1987Relaxation of trapped charge at silicon grain boundary statesLing, C.H. ; Kwok, C.Y.; Woo, P.K.
16Mar-1987Relaxation of trapped charge at silicon grain boundary statesLing, C.H. ; Kwok, C.Y.; Woo, P.K.
17Oct-1986SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.Ling, C.H. ; Kwok, C.Y.; Prasad, K.
18Oct-1986SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.Ling, C.H. ; Kwok, C.Y.; Prasad, K.