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PARK CHANG SEO

rp08110

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Profile

Full Name
PARK CHANG SEO
(not current staff)
Variants
Park, C.S.
PARK, CHANG SEO
 
Main Affiliation
 
Faculty
 
Email
elepcs@nus.edu.sg
 

Publications

Results 1-12 of 12 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
12003A Novel Approach for Integration of Dual Metal Gate Process Using Ultra Thin Aluminum Nitride Buffer LayerPark, C.S. ; Cho, B.J. ; Yan, D.A.; Balasubramanian, N.; Kwong, D.-L.
2May-2003An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layerPark, C.S. ; Cho, B.J. ; Kwong, D.-L.
3Nov-2005Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinningPark, C.S. ; Cho, B.J. 
42005Dual metal gate process by metal substitution of dopant-free polysilicon on high-K dielectricPark, C.S. ; Cho, B.J. ; Hwang, W.S.; Loh, W.Y.; Tang, L.J.; Kwong, D.-L.
5Sep-2004Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate processPark, C.S. ; Cho, B.J. ; Balasubramanian, N.; Kwong, D.-L.
6May-2006Interface configuration and Fermi-level pinning of fully silicided gate and high-K dielectric stackJoo, M.S. ; Park, C.S. ; Cho, B.J. ; Balasubramanian, N.; Kwong, D.-L.
78-Jan-2008Method of fabricating a CMOS device with dual metal gate electrodesPARK, CHANG SEO ; CHO, BYUNG JIN ; BALASUBRAMANIAN, NARAYANAN T. 
8Nov-2004MOS characteristics of substituted Al gate on high-κ dielectricPark, C.S. ; Cho, B.J. ; Kwong, D.-L.
9Sep-2004MOS Characteristics of synthesized HfAlON-HfO2 stack using AlN-HfO2Park, C.S. ; Cho, B.J. ; Kwong, D.-L.
102004Substituted aluminum metal gate on high-K dielectric for low work-function and fermi-level pinning freePark, C.S. ; Cho, B.J. ; Tang, L.J.; Kwong, D.-L.
117-Dec-2006Thermally stable fully silicided Hf silicide metal gate electrodePARK, CHANG SEO ; CHO, BYUNG JIN 
12Jun-2004Thermally stable fully silicided Hf-silicide metal-gate electrodePark, C.S. ; Cho, B.J. ; Kwong, D.-L.