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|Title:||Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process||Authors:||Park, C.S.
|Issue Date:||Sep-2004||Citation:||Park, C.S., Cho, B.J., Balasubramanian, N., Kwong, D.-L. (2004-09). Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process. Thin Solid Films 462-463 (SPEC. ISS.) : 15-18. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.083||Abstract:||We evaluated the feasibility of using an ultra thin aluminum nitride (AlN) buffer layer for dual metal gates CMOS process. Since the buffer layer should not affect the thickness of gate dielectric, it should be removed or consumed during subsequent process. In this work, it was shown that a thin AlN dielectric layer would be reacted with initial gate metals and would be consumed during subsequent annealing, resulting in no increase of equivalent oxide thickness (EOT). The reaction of AlN layer with tantalum (Ta) and hafnium (Hf) during subsequent annealing, which was confirmed with X-ray photoelectron spectroscopy (XPS) analysis, shifted the flat-band voltage of AlN buffered MOS capacitors. No contribution to equivalent oxide thickness (EOT) was also an indication showing the full consumption of AIN, which was confirmed with TEM analysis. The work functions of gate metals were modulated through the reaction, suggesting that the consumption of AlN resulted in new thin metal alloys. Finally, it was found that the barrier heights of the new alloys were consistent with their work functions. © 2004 Published by Elsevier B.V.||Source Title:||Thin Solid Films||URI:||http://scholarbank.nus.edu.sg/handle/10635/56032||ISSN:||00406090||DOI:||10.1016/j.tsf.2004.05.083|
|Appears in Collections:||Staff Publications|
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