PARK CHANG SEO

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Full Name

PARK CHANG SEO

(not current staff)

Variants

Park, C.S.
PARK, CHANG SEO

Main Affiliation

ELECTRICAL AND COMPUTER ENGINEERING

Faculty

FAC OF ENGINEERING

elepcs@nus.edu.sg

Refined By:

Author: Kwong, D.-L.

Results 1-10 of 10 (Search time: 0.003 seconds).

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	Issue Date	Title	Author(s)
1	2003	A Novel Approach for Integration of Dual Metal Gate Process Using Ultra Thin Aluminum Nitride Buffer Layer	Park, C.S. ; Cho, B.J. ; Yan, D.A.; Balasubramanian, N.; Kwong, D.-L.
2	May-2003	An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer	Park, C.S. ; Cho, B.J. ; Kwong, D.-L.
3	2005	Dual metal gate process by metal substitution of dopant-free polysilicon on high-K dielectric	Park, C.S. ; Cho, B.J. ; Hwang, W.S.; Loh, W.Y.; Tang, L.J.; Kwong, D.-L.
184	Sep-2004	Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process	Park, C.S. ; Cho, B.J. ; Balasubramanian, N.; Kwong, D.-L.
185	May-2006	Interface configuration and Fermi-level pinning of fully silicided gate and high-K dielectric stack	Joo, M.S. ; Park, C.S. ; Cho, B.J. ; Balasubramanian, N.; Kwong, D.-L.
66	Nov-2004	MOS characteristics of substituted Al gate on high-κ dielectric	Park, C.S. ; Cho, B.J. ; Kwong, D.-L.
67	Nov-2004	MOS characteristics of substituted Al gate on high-κ dielectric	Park, C.S. ; Cho, B.J. ; Kwong, D.-L.
68	Sep-2004	MOS Characteristics of synthesized HfAlON-HfO2 stack using AlN-HfO2	Park, C.S. ; Cho, B.J. ; Kwong, D.-L.
69	2004	Substituted aluminum metal gate on high-K dielectric for low work-function and fermi-level pinning free	Park, C.S. ; Cho, B.J. ; Tang, L.J.; Kwong, D.-L.
70	Jun-2004	Thermally stable fully silicided Hf-silicide metal-gate electrode	Park, C.S. ; Cho, B.J. ; Kwong, D.-L.