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Chan Siu Hung,Daniel

rp07001

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Full Name
Chan Siu Hung,Daniel
(not current staff)
Variants
Chan, Daniel S.H.
CHAN, DANIEL S. H.
Chan, D.S.-H.
Chan, D.S.H.
CHAN SIU HUNG DANIEL
CHAN, DANIEL SIU HUNG
Daniel Chan, S.H.
Chan, D.
CHAN, D. S. H.
 
Main Affiliation
 
Faculty
 
Email
elecshd@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2021]
Author:  Lo, G.Q.

Results 1-12 of 12 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
1Nov-2007CMOS compatible dual metal gate integration with successful Vth adjustment on high-k HfTaON by high-temperature metal intermixingRen, C.; Chan, D.S.H. ; Loh, W.Y.; Lo, G.Q.; Balasubramanian, N.; Kwong, D.-L.
22007CMOS compatible dual metal gate integration with successful vth adjustment on high-k HfTaON by high-temperature metal intermixingRen, C.; Chan, D.S.H. ; Loh, W.Y.; Peng, J.W.; Balakumar, S.; Jiang, Y.; Tung, C.H.; Du, A.Y.; Lo, G.Q.; Kumar, R.; Balasubramanian, N.; Kwong, D.-L.
3Jul-2007Flicker noise and its degradation characteristics under electrical stress in MOSFETs with thin strained-Si/SiGe dual-quantum wellJiang, Y.; Loh, W.Y.; Chan, D.S.H. ; Xiong, Y.Z.; Ren, C.; Lim, Y.F.; Lo, G.Q.; Kwong, D.-L.
4Jun-2008Ge-rich (70%) SiGe nanowire MOSFET fabricated using pattern-dependent Ge-condensation techniqueJiang, Y.; Singh, N.; Liow, T.Y.; Loh, W.Y.; Balakumar, S.; Hoe, K.M.; Tung, C.H.; Bliznetsov, V.; Rustagi, S.C.; Lo, G.Q.; Chan, D.S.H. ; Kwong, D.L.
52008Nanowire FETs for Low Power CMOS Applications Featuring Novel Gate-All-Around Single Metal FUSI Gates with Dual φ m and v T Tune-abilityJiang, Y.; Liow, T.Y.; Singh, N.; Tan, L.H.; Lo, G.Q.; Chan, D.S.H. ; Kwong, D.L.
62009Nickel salicided source/drain extensions for performance improvement in ultrascaled (Sub 10 nm) Si-nanowire transistorsJiang, Y.; Liow, T.Y.; Singh, N.; Tan, L.H.; Lo, G.Q.; Chan, D.S.H. ; Kwong, D.L.
72009Omega-gate p-MOSFET with nanowirelike SiGe/Si core/shell channelJiang, Y.; Singh, N.; Liow, T.Y.; Lim, P.C.; Tripathy, S.; Lo, G.Q.; Chan, D.S.H. ; Kwong, D.-L.
82008Performance breakthrough in 8 nm gate length gate-all-around nanowire transistors using metallic nanowire contactsJiang, Y.; Liow, T.Y.; Singh, N.; Tan, L.H.; Lo, G.Q.; Chan, D.S.H. ; Kwong, D.L.
9Sep-2006Random telegraph signal noise in gate-all-around Si-FinFET with ultranarrow bodyLim, Y.F.; Xiong, Y.Z.; Singh, N.; Yang, R.; Jiang, Y.; Chan, D.S.H. ; Loh, W.Y.; Bera, L.K.; Lo, G.Q.; Balasubramanian, N.; Kwong, D.-L.
102008Reduced carrier backscattering in heterojunction SiGe nanowire channelsJiang, Y.; Singh, N.; Liow, T.Y.; Lo, G.Q.; Chan, D.S.H. ; Kwong, D.L.
112006Reduction of leakage and low-frequency noise in MOS transistors through two-step RTA of NiSi-Silicide technologyYang, R.; Loh, W.Y.; Yu, M.B.; Xiong, Y-.Z.; Choy, S.F.; Jiang, Y.; Chan, D.S.H. ; Lim, Y.F.; Bera, L.K.; Wong, L.Y.; Li, W.H.; Du, A.Y.; Tung, C.H.; Hoe, K.M.; Lo, G.Q.; Balasubramanian, N.; Kwong, D.-L.
122006Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS processRen, C.; Chan, D.S.H. ; Loh, W.Y.; Balakumar, S.; Du, A.Y.; Tung, C.H.; Lo, G.Q.; Kumar, R.; Balasubramanian, N.; Kwong, D.-L.