Full Name
Osipowicz Thomas
Variants
Osipowitcz, T.
Osipowicz, T.
OSIPOWICZ, THOMAS
Osiposwicz, T.
Thomas, O.
Osipowice, T.
Osipowicz Thomas
 
Main Affiliation
 
Faculty
 
Email
phyto@nus.edu.sg
 

Refined By:
Author:  Lee, Y.K.

Results 1-13 of 13 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
115-May-2002Behaviour of ionized metal plasma deposited Ta diffusion barrier between Cu and SiO2Maung Latt, K.; Park, H.S.; Li, S.; Rong, L. ; Osipowicz, T. ; Zhu, W.G.; Lee, Y.K.
27-Aug-2000Characterization of interfacial reactions between ionized metal plasma deposited Al-0.5 wt.% Cu and Ti on SiO2Lee, Y.K.; Maung Latt, K.; Li, S.; Osipowicz, T. ; Chiam, S.Y. 
329-Sep-2000Comparative analysis and study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-TaN on SiO2Lee, Y.K.; Latt, K.M.; JaeHyung, K.; Osipowicz, T. ; Sher-Yi, C. ; Lee, K.
41-Dec-2001Comparative study of copper films prepared by ionized metal plasma sputtering and chemical vapor deposition in the Cu/TaN/SiO2/Si multilayer structureLatt, K.M.; Sher-Yi, C. ; Osipowicz, T. ; Lee, K.; Lee, Y.K.
515-Dec-2001Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxideLatt, K.M.; Lee, Y.K.; Seng, H.L. ; Osipowicz, T. 
67-Mar-2002Effect of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si multi-layer structureLatt, K.M.; Park, H.S.; Seng, H.L. ; Osipowicz, T. ; Lee, Y.K.; Li, S.
715-Jun-2002Interfacial reactions and failure mechanism of Cu/Ta/SiO2/Si multilayer structure in thermal annealingLatt, K.M.; Lee, Y.K.; Osipowicz, T. ; Park, H.S.
821-Jun-2001Properties of electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO2/Si multilayer structureLatt, K.M.; Lee, K.; Osipowicz, T. ; Lee, Y.K.
927-Dec-1999Study of diffusion barrier properties of ionized metal plasma (IMP) deposited tantalum (Ta) between Cu and SiO2Lee, Y.K.; Maung Latt, K.; Jaehyung, K.; Osipowicz, T. ; Lee, K.
10Jun-2000Study of diffusion barrier properties of ternary alloy (TixAlyNz) in Cu/TixAlyNz/SiO2/Si thin film structureLee, Y.K.; Latt, K.M.; Osipowicz, T. ; Sher-Yi, C. 
11Dec-2000Study of interfacial reactions in ionized metal plasma (IMP) deposited Al-0.5%wt Cu/Ti/SiO2Si structureLee, Y.K.; Latt, K.M.; Jaehyung, K.; Osipowicz, T. ; Chiam, S.-Y. ; Lee, K.
121-Oct-2002Study on SiNx passivated Cu/Ta/SiO2/Si multilayer structureLatt, K.M.; Park, H.S.; Seng, H.L. ; Osipowicz, T. ; Lee, Y.K.
1320-Jul-2001The impact of layer thickness of IMP-deposited tantalum nitride films on integrity of Cu/TaN/SiO2/Si multilayer structureLatt, K.M.; Lee, Y.K.; Li, S.; Osipowicz, T. ; Seng, H.L.