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Tan Leng Seow

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Full Name
Tan Leng Seow
Variants
Tan, Leng Seow
Tan, L.S.
Tan, L.-S.
 
Main Affiliation
 
Faculty
 
Email
sletanls@nus.edu.sg
 
Other emails
 

Publications

Refined By:
Date Issued:  [2000 TO 2021]
Department:  ELECTRICAL ENGINEERING

Results 1-13 of 13 (Search time: 0.003 seconds).

Issue DateTitleAuthor(s)
12000Activation of beryllium-implanted GaN by two-step annealingSun, Yuejun; Tan, Leng Seow ; Chua, Soo Jin ; Prakash, Savarimuthu 
22000Activation of beryllium-implanted GaN by two-step annealingSun, Y.; Tan, L.S. ; Chua, S.J. ; Prakash, S. 
32000Determination of minority carrier diffusion lengths in the denuded zones of silicon wafers by surface photovoltage measurementsTan, L.S. ; Koh, S.H.; Prakash, S. ; Choi, W.K. ; Zhang, Z.
42000Effect of surface conditions on the measurement of minority carrier diffusion lengths using the surface photovoltage techniqueZhang, Z.; Tan, L.S. ; Koh, S.M.; Liu, H.M.; Flottmann, D.
515-Mar-2000Effects of RF power and annealing on the electrical and structural properties of sputtered amorphous silicon carbide filmsChoi, W.K. ; Chong, N.B.; Tan, L.S. ; Han, L.J.
6Jun-2000Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealingTan, L.S. ; Prakash, S. ; Ng, K.M.; Ramam, A. ; Chua, S.J. ; Wee, A.T.S. ; Lim, S.L. 
72000Mechanisms of intersubband transition in n-type III-V quantum well superlattice and improvement on absorption for TE polarized fieldCheah, C.W.; Karunasiri, G. ; Tan, L.S. 
82000Mechanisms of intersubband transition in n-type III-V quantum well superlattice and improvement on absorption for TE polarized fieldCheah, C.W.; Karunasiri, G. ; Tan, L.S. 
92000Ohmic contact formation on silicon-doped gallium nitride epilayers by low temperature annealingPrakash, S. ; Tan, L.S. ; Ng, K.M.; Raman, A.; Chua, S.J. ; Wee, A.T.S. ; Lim, S.L. 
105-Oct-2000Quasianalytical model for LT-GaAs and LT-Al0.3Ga0.7As MISFET devicesRao, R.V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S.; Liou, J.J.
117-Jan-2002Responsivities of n-type GaAs/InGaAs/AlGaAs step multiple-quantum-well infrared detectorsCheah, C.W.; Karunasiri, G. ; Tan, L.S. ; Zhou, L.F.
122000Spreading resistance profiling of ultrashallow junction NPN BJT, with carrier redistribution effectTan, L.C.P.; Tan, L.S. ; Leong, M.S. 
13Jun-2000Thermal stability of MISFET with low-temp molecular-beam epitaxy-grown GaAs and Al0.3Ga0.7As gate InsRao, R.V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S.