Full Name
Chun Huat Heng
Variants
Heng, C.-H.
Heng C.-H
Heng, Chun Huat
Hens, C.-H.
Heng, C.H.
 
 
 
Email
elehch@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Author:  Samudra, G.

Results 1-9 of 9 (Search time: 0.003 seconds).

Issue DateTitleAuthor(s)
12008A complementary-I-MOS technology featuring SiGe channel and I-region for enhancement of impact-ionization, breakdown voltage, and performanceToh, E.-H.; Wang, G.H.; Chan, L.; Lo, G.-Q.; Sylvester, D.; Heng, C.-H. ; Samudra, G. ; Yeo, Y.-C. 
22009A new robust non-local algorithm for band-to-band tunneling simulation and its application to tunnel-FETShen, C.; Yang, L.T.; Toh, E.-H.; Heng, C.-H. ; Samudra, G.S. ; Yeo, Y.-C. 
32008A variational approach to the two-dimensional nonlinear Poisson's equation for the modeling of tunneling transistorsShen, C.; Ong, S.-L.; Heng, C.-H. ; Samudra, G. ; Yeo, Y.-C. 
42008Compact HSPICE model for IMOS deviceLin, J. ; Toh, E.H.; Shen, C.; Sylvester, D.; Heng, C.H. ; Samudra, G. ; Yeo, Y.C. 
525-Apr-2008Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium sourceToh, E.-H.; Wang, G.H.; Chan, L.; Sylvester, D.; Heng, C.-H. ; Samudra, G.S. ; Yeo, Y.-C. 
62007Impact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mV/decade subtheshold swingToh, E.-H.; Wang, G.H.; Zhu, M. ; Shen, C.; Chan, L.; Lo, G.-Q.; Tung, C.-H.; Sylvester, D.; Heng, C.-H. ; Samudra, G. ; Yeo, Y.-C. 
72007On the performance limit of impact-ionization transistorsShen, C.; Lin, J.-Q.; Toh, E.-H.; Chang, K.-F.; Bait, P.; Heng, C.-H. ; Samudra, G.S. ; Yeo, Y.-C. 
82007Silicon nano-wire impact ionization transistors with multiple-gates for enhanced gate control and performanceToh, E.-H.; Wang, G.H.; Shen, C.; Zhu, M. ; Chan, L.; Heng, C.-H. ; Samudra, G. ; Yeo, Y.-C. 
9Dec-2009SPICE behavioral model of the tunneling field-effect transistor for circuit simulationHong, Y.; Yang, Y.; Yang, L.; Samudra, G. ; Heng, C.-H. ; Yeo, Y.-C.