Please use this identifier to cite or link to this item: https://doi.org/10.1109/ESSDERC.2007.4430936
Title: A complementary-I-MOS technology featuring SiGe channel and I-region for enhancement of impact-ionization, breakdown voltage, and performance
Authors: Toh, E.-H.
Wang, G.H.
Chan, L.
Lo, G.-Q.
Sylvester, D.
Heng, C.-H. 
Samudra, G. 
Yeo, Y.-C. 
Issue Date: 2008
Citation: Toh, E.-H., Wang, G.H., Chan, L., Lo, G.-Q., Sylvester, D., Heng, C.-H., Samudra, G., Yeo, Y.-C. (2008). A complementary-I-MOS technology featuring SiGe channel and I-region for enhancement of impact-ionization, breakdown voltage, and performance. ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference : 295-298. ScholarBank@NUS Repository. https://doi.org/10.1109/ESSDERC.2007.4430936
Abstract: We report the first demonstration of Silicon-Germanium (SiGe) Impact-ionization MOS (I-MOS) transistors that feature a SiGe channel and a SiGe Impact-ionization region. The lower bandgap of SiGe as compared to Si contributes to higher electron and hole impact-ionization rates, leading to avalanche breakdown at a much reduced source voltage and enhanced device performance. Both n- and p-channel I-MOS devices were fabricated on Si 0.75Ge0.25-On-Insulator substrates using a CMOS-compatible process flow. Compared to Si I-MOS, the breakdown voltage of SiGe I-MOS is reduced by ∼1 V along with the doubling of the drive current and transconductance. The subthreshold swing is also improved. Excellent subthreshold swings of 2.88 mV/decade and 3.24 mV/decade are achieved for the n- and p-channel SiGe I-MOS devices, respectively. © 2007 IEEE.
Source Title: ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference
URI: http://scholarbank.nus.edu.sg/handle/10635/83343
ISBN: 1424411238
DOI: 10.1109/ESSDERC.2007.4430936
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