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Gong Hao

rp01924

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Full Name
Gong Hao
Variants
Hao, G.
Gong, Hao
Gong, H.
HAO, GONG
GONG, HAO
Gong H.
 
Main Affiliation
 
Faculty
 
Email
msegongh@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Type:  Article

Results 1-20 of 97 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
12005A study of conduction in the transition zone between homologous and ZnO-rich regions in the In 2 O 3 -ZnO systemKumar, B. ; Gong, H. ; Akkipeddi, R.
2Sep-2000Analysis of triple Co alloy layer magnetic thin films with different bias configurationJin, D.; Wang, J.P.; Gong, H. 
3Jul-2001Annealing effects of tantalum films on Si and SiO2/Si substrates in various vacuumsLiu, L. ; Wang, Y. ; Gong, H. 
420-Oct-2001Annealing effects of tantalum thin films sputtered on [001] silicon substrateLiu, L. ; Gong, H. ; Wang, Y. ; Wang, J. ; Wee, A.T.S ; Liu, R. 
52007Annealing effects on electrical and optical properties of ZnO thin-film samples deposited by radio frequency-magnetron sputtering on GaAs (001) substratesLiu, H.F.; Chua, S.J.; Hu, G.X. ; Gong, H. ; Xiang, N. 
6Oct-2001Characterisation of high temperature corrosion products on FeAl intermetallics by XPSXu, C.-H.; Gao, W.; Hyland, M.; Gong, H. 
72006Control of p - and n -type conductivities in P doped ZnO thin films by using radio-frequency sputteringYu, Z.G.; Wu, P.; Gong, H. 
8May-2001Correspondence: Effects of deliberate copper contamination from the plating solution on the electrical characteristics of MOSFETsTee, K.C.; Prasad, K.; Lee, C.S.; Gong, H. ; Cha, C.L.; Chan, L.; See, A.K.
922-Feb-2005Dopant sources choice for formation of p-type ZnO: Phosphorus compound sourcesYu, Z.G.; Gong, H. ; Wu, P.
10Feb-2005Dynamic thermal degradation studies on amorphous carbon thin filmsLi, Y.Q.; Zhang, L.H.; Gong, H. 
1125-Jun-2008Effect of ion bombardment on the synthesis of vertically aligned single-walled carbon nanotubes by plasma-enhanced chemical vapor depositionLuo, Z.; Lim, S.; You, Y.; Miao, J.; Gong, H. ; Zhang, J. ; Wang, S.; Lin, J.; Shen, Z.
12May-2000Effect of magnetic anisotropy distribution in longitudinal thin film mediaHee, C.H.; Wang, J.P.; Gong, H. ; Low, T.S. 
1320-Oct-2001Effects of nominal intermediate layer on microstructure and magnetic property in CoCrPtTa/CrTi thin filmsJin, D.; Wang, J.P.; Gong, H. 
142008Effects of oxygen on low-temperature growth and band alignment of ZnO/GaN heterostructuresLiu, H.F.; Hu, G.X. ; Gong, H. ; Zang, K.Y.; Chua, S.J.
152007Effects of substrate on the structure and orientation of ZnO thin film grown by rf-magnetron sputteringLiu, H.F.; Chua, S.J.; Hu, G.X. ; Gong, H. ; Xiang, N. 
162000Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdownCha, C.L.; Chor, E.F. ; Gong, H. ; Chan, L.
17Oct-2008Efficient bulk heterojunction solar cells from regio-regular- poly(3,3‴-didodecyl quaterthiophene)/PC70BM blendsVemulamada, P.; Hao, G. ; Kietzke, T.; Sellinger, A.
181-Aug-2001Electrical characterization and metallurgical analysis of Pd-containing multilayer contacts on GaNChor, E.F. ; Zhang, D.; Gong, H. ; Chen, G.L.; Liew, T.Y.F.
19Mar-2000Electrical characterization, metallurgical investigation, and thermal stability studies of (Pd, Ti, Au)-based ohmic contactsChor, E.F. ; Zhang, D.; Gong, H. ; Chong, W.K.; Ong, S.Y.
20Feb-2005Electronic properties of barium chalcogenides from first-principles calculations: Tailoring wide-band-gap II-VI semiconductorsLin, G.Q. ; Gong, H. ; Wu, P.