Please use this identifier to cite or link to this item: https://doi.org/10.1109/66.920729
Title: Correspondence: Effects of deliberate copper contamination from the plating solution on the electrical characteristics of MOSFETs
Authors: Tee, K.C.
Prasad, K.
Lee, C.S.
Gong, H. 
Cha, C.L.
Chan, L.
See, A.K.
Keywords: Contamination
Copper
MOSFET
Silicon
Issue Date: May-2001
Citation: Tee, K.C., Prasad, K., Lee, C.S., Gong, H., Cha, C.L., Chan, L., See, A.K. (2001-05). Correspondence: Effects of deliberate copper contamination from the plating solution on the electrical characteristics of MOSFETs. IEEE Transactions on Semiconductor Manufacturing 14 (2) : 170-172. ScholarBank@NUS Repository. https://doi.org/10.1109/66.920729
Abstract: N-channel and p-channel metal-oxide-semiconductor (MOS) transistors of various (W/L) ratios down to 0.24-μm channel length have been used to investigate the effects of deliberate backside copper (Cu) contamination on the MOS field-effect transistor (MOSFET) electrical parameters. The backside of the wafer was flooded with copper sulphate (CuSO4) solution and air-dried. High-temperature annealing was carried out to drive Cu into silicon. It was discovered that the backside Cu contamination did not result in any undesirable effects on the MOS device performance. The MOS device parameters such as threshold voltage VTo, transconductance Gm, drain saturation current IDSAT, off-current Ioff, and junction leakage current for n+/p and p+/n diodes displayed no significant degradation, even after 5 h of annealing at 400 °C in nitrogen ambient. Secondary ion mass spectroscopy data shows that Cu diffused into silicon only over a short distance, leading to little or no degradation of MOSFETs and junction diodes.
Source Title: IEEE Transactions on Semiconductor Manufacturing
URI: http://scholarbank.nus.edu.sg/handle/10635/106993
ISSN: 08946507
DOI: 10.1109/66.920729
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

6
checked on Jun 16, 2021

WEB OF SCIENCETM
Citations

6
checked on Jun 16, 2021

Page view(s)

46
checked on Jun 20, 2021

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.