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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Date Issued:  2007
Author:  Toh, E.-H.

Results 1-15 of 15 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
12007A strained N-channel impact-ionization MOS (I-MOS) transistor with elevated silicon-carbon source/drain for performance enhancementToh, E.-H.; Wang, G.H.; Lo, G.-Q.; Choy, S.-F.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
22007Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimizationToh, E.-H.; Wang, G.H.; Samudra, G. ; Yeo, Y.-C. 
32007Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunctionToh, E.-H.; Wang, G.H.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
42007Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealingWang, G.H.; Toh, E.-H.; Tung, C.-H.; Foo, Y.-L.; Tripathy, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
52007Impact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mV/decade subtheshold swingToh, E.-H.; Wang, G.H.; Zhu, M. ; Shen, C.; Chan, L.; Lo, G.-Q.; Tung, C.-H.; Sylvester, D.; Heng, C.-H. ; Samudra, G. ; Yeo, Y.-C. 
62007On the performance limit of impact-ionization transistorsShen, C.; Lin, J.-Q.; Toh, E.-H.; Chang, K.-F.; Bait, P.; Heng, C.-H. ; Samudra, G.S. ; Yeo, Y.-C. 
72007Performance enhancement of n-channel impact-ionization metal-oxide- semiconductor transistor by strain engineeringToh, E.-H.; Wang, G.H.; Lo, G.-Q.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
82007Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistorsToh, E.-H.; Wang, G.H.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
92007Silicon nano-wire impact ionization transistors with multiple-gates for enhanced gate control and performanceToh, E.-H.; Wang, G.H.; Shen, C.; Zhu, M. ; Chan, L.; Heng, C.-H. ; Samudra, G. ; Yeo, Y.-C. 
102007Silicon-germanium-tin (SiGeSn) source and drain stressors formed by Sn implant and laser annealing for strained silicon-germanium channel P-MOSFETsWang, G.H.; Toh, E.-H.; Wang, X.; Seng, D.H.L.; Tripathy, S.; Osipowicz, T.; Chan, T.K.; Hoe, K.M.; Balakumar, S.; Tung, C.H.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
11Oct-2007Strain and materials engineering for the I-MOS transistor with an elevated impact-ionization regionToh, E.-H.; Wang, G.H.; Chan, L.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
122007Strained Si n-FET featuring compliant SiGe Stress Transfer Layer (STL) and Si0.98C0.02 source/drain stressors for performance enhancementWang, G.H.; Toh, E.-H.; Weeks, D.; Landin, T.; Spear, J.; Tung, C.H.; Thomas, S.G.; Samudra, G. ; Yeo, Y.-C. 
132007Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealingWang, G.H.; Toh, E.-H.; Wang, X.; Tripathy, S.; Osipowicz, T. ; Chan, T.K. ; Hoe, K.-M.; Balakumar, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
1424-Apr-2007Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancementWang, G.H.; Toh, E.-H.; Tung, C.-H.; Du, A.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
152007Sub 50nm strained n-FETs formed on silicon-germanium-on-insulator substrates and the integration of silicon source/drain stressorsWang, G.H.; Toh, E.-H.; Hoe, K.-M.; Tripathy, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C.