Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
 
 
Email
eleshanr@nus.edu.sg
 

Refined By:
Author:  Samudra, G.
Date Issued:  2010

Results 1-11 of 11 (Search time: 0.038 seconds).

Issue DateTitleAuthor(s)
12010A computational study on the device performance of graphene nanoribbon heterojunction tunneling FETs based on bandgap engineeringLam, K.-T.; Da, H. ; Chin, S.-K.; Samudra, G. ; Yeo, Y.-C. ; Liang, G. 
2Jun-2010A simulation study of graphene-nanoribbon tunneling FET with heterojunction channelLam, K.-T.; Seah, D.; Chin, S.-K.; Bala Kumar, S. ; Samudra, G. ; Yeo, Y.-C. ; Liang, G. 
32010A smart-power synchronous rectifier by CMOS processLim, C.Y.; Liang, Y.C. ; Samudra, G.S. ; Balasubramanian, N.
42010Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boostKoh, S.-M.; Zhang, P.; Ren, S.-F.; Ng, C.-M.; Samudra, G.S. ; Yeo, Y.-C. 
519-Jul-2010Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressorsKoh, S.-M.; Samudra, G.S. ; Yeo, Y.-C. 
6Nov-2010Device physics and characteristics of graphene nanoribbon tunneling FETsChin, S.-K.; Seah, D.; Lam, K.-T.; Samudra, G.S. ; Liang, G. 
7Jul-2010Modeling of stress-retarded thermal oxidation of nonplanar silicon structures for realization of nanoscale devicesMa, F.-J. ; Rustagi, S.C.; Samudra, G.S. ; Zhao, H.; Singh, N.; Lo, G.-Q.; Kwong, D.-L.
82010Schottky barrier height modulation with aluminum segregation and pulsed laser anneal: A route for contact resistance reductionKoh, S.-M.; Ng, C.-M.; Liu, P.; Mo, Z.-Q.; Wang, X.; Zheng, H.; Zhao, Z.-Y.; Variam, N.; Henry, T.; Erokhin, Y.; Samudra, G.S. ; Yeo, Y.-C. 
9Apr-2010Shape effects on the performance of Si and Ge nanowire field-effect transistors based on size dependent bandstructureKoong, C.S.; Samudra, G. ; Liang, G. 
102010Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancementKoh, S.-M.; Wong, H.-S.; Gong, X.; Ng, C.-M.; Variam, N.; Henry, T.; Erokhin, Y.; Samudra, G.S. ; Yeo, Y.-C. 
1127-May-2010Temperature independent current biasing employing TFETGuo, P.F.; Yang, Y.; Samudra, G. ; Heng, C.H. ; Yeo, Y.C.