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Gong Hao

rp01924

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Full Name
Gong Hao
Variants
Hao, G.
Gong, Hao
Gong, H.
HAO, GONG
GONG, HAO
Gong H.
 
Main Affiliation
 
Faculty
 
Email
msegongh@nus.edu.sg
 

Publications

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Department:  MATERIALS SCIENCE
Type:  Conference Paper

Results 1-20 of 24 (Search time: 0.008 seconds).

Issue DateTitleAuthor(s)
11-Aug-2003A room temperature indium tin oxide/quartz crystal microbalance gas sensor for nitric oxideHu, J.; Zhu, F.; Zhang, J.; Gong, H. 
220-Jan-2002Annealing effects on contact properties of Aluminum doped Zinc Oxide thin filmsLow, K.B.; Gong, H. ; Chor, E.F. 
31998Application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurementCha, C.L.; Chor, E.F. ; Gong, H. ; Teo, T.H.; Zhang, A.Q.; Chan, L.
41997Breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices upon current stressingCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.
51997Constant current-stress induced breakdown of reoxidized nitrided oxide (ONO) in Flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
620-Jan-2002Crystal growth of Al-doped ZnO films under different sputtering conditionsGoh, E.G.; Gong, H. 
720-Jan-2002Crystal structure and gas sensing properties of Cu-doped zinc oxideOng, C.H.; Wang, J.H.; Gong, H. ; Chan, H.S.O. 
820-Jan-2002Crystal structure and properties of CU-Al-O thin filmsWang, Y. ; Gong, H. ; Liu, L. 
920-Jan-2002Crystallization and optoelectronic properties of indium-Zinc-Oxide thin films annealed in argon and vacuumChoy, S.F.; Gong, H. ; Zhu, F.
101999Effect of Cu contamination on electrical characteristics for PMOS transistorsTee, K.C.; Prasad, K.; Lee, C.S.; Gong, H. ; Chan, L.; See, A.K.
11Sep-2000Effect of orientation ratio on recording performance for longitudinal thin film mediaHee, C.H.; Wang, J.P.; Gong, H. ; Low, T.S. 
1215-Dec-2003Effects of aluminum on the properties of p-type Cu-Al-O transparent oxide semiconductor prepared by reactive co-sputteringOng, C.H.; Gong, H. 
131997Effects of constant current-stressing on reoxidized nitrided oxide (ONO) in flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.; Xie, J.
141-Jun-2004FePt and Fe nanocomposite by annealing self-assembled FePt nanoparticlesLu, M.H. ; Song, T.; Zhou, T.J.; Wang, J.P.; Piramanayagam, S.N. ; Ma, W.W.; Gong, H. 
1520-Jan-2002Nano-crystal alloy and alloy-oxide coatings and their high-temperature corrosion propertiesGao, W.; Liu, Z.; Li, Z.; Li, S.S.; Gong, H. 
161996New observation of surface pre-breakdown of polymethyl-methacrcylate in vacuum with a scanning electron microscopeGong, H. ; Ong, C.K. 
1720-Jan-2002Sims depth profiling analysis of Cu/Ta/SiO2 interfacial diffusion at different annealing temperatureLiu, L. ; Gong, H. ; Wang, Y. ; Wee, A.T.S. ; Liu, R. 
182005Study on p-type ZnO: A potential new source of solid state lightingYu, Z.G.; Wu, P.; Gong, H. 
192003Surface electronic structure of nitric-oxide-treated indium tin oxideJianqiao, H.; Jisheng, P.; Zhu, F.; Hao, G. 
202000The use of sample rotation in SIMS profiling of Ta barrier layers to Cu diffusionLiu, R. ; Wee, A.T.S. ; Liu, L. ; Hao, G.